| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
1N5377B |
91 V, 15 mA, 5 W glass passivated zener diode |
Fagor |
| 1832 |
1N5377B |
91 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1833 |
1N5378B |
100 V, 5 Watt surmetic 40 silicon zener diode |
Boca Semiconductor Corporation |
| 1834 |
1N5378B |
100 V, 12 mA, 5 W glass passivated zener diode |
Fagor |
| 1835 |
1N5378B |
100 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1836 |
1N5379B |
110 V, 5 Watt surmetic 40 silicon zener diode |
Boca Semiconductor Corporation |
| 1837 |
1N5379B |
110 V, 12 mA, 5 W glass passivated zener diode |
Fagor |
| 1838 |
1N5379B |
110 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1839 |
1N5380B |
120 V, 10 mA, 5 W glass passivated zener diode |
Fagor |
| 1840 |
1N5380B |
Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 120V, Izt =10mA |
Panjit International Inc |
| 1841 |
1N5380B |
120 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1842 |
1N5381B |
130 V, 10 mA, 5 W glass passivated zener diode |
Fagor |
| 1843 |
1N5381B |
130 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1844 |
1N5382B |
140 V, 8 mA, 5 W glass passivated zener diode |
Fagor |
| 1845 |
1N5382B |
140 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1846 |
1N5383B |
150 V, 8 mA, 5 W glass passivated zener diode |
Fagor |
| 1847 |
1N5383B |
150 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1848 |
1N5384B |
160 V, 8 mA, 5 W glass passivated zener diode |
Fagor |
| 1849 |
1N5384B |
160 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1850 |
1N5385B |
170 V, 8 mA, 5 W glass passivated zener diode |
Fagor |
| 1851 |
1N5385B |
170 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1852 |
1N5386B |
180 V, 5 mA, 5 W glass passivated zener diode |
Fagor |
| 1853 |
1N5386B |
180 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1854 |
1N5387B |
190 V, 5 mA, 5 W glass passivated zener diode |
Fagor |
| 1855 |
1N5387B |
190 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1856 |
1N5388B |
200 V, 5 mA, 5 W glass passivated zener diode |
Fagor |
| 1857 |
1N5388B |
200 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1858 |
1N5391 |
50 V, 1.5 A silicon rectifier |
Invac |
| 1859 |
1N5391 |
50 V, 1.5 A, plastic silicon rectifier |
TRANSYS Electronics Limited |
| 1860 |
1N5391G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. |
Jinan Gude Electronic Device |
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