No. |
Part Name |
Description |
Manufacturer |
18511 |
ECMF02-2BF3 |
Common mode filter with ESD protection for high speed serial interface |
ST Microelectronics |
18512 |
ECMF02-3F3 |
Common mode filter with ESD protection |
ST Microelectronics |
18513 |
ECMF02-3HSM6 |
Common mode filter with ESD protection for MHL/USB2.0/USB3.0 interface |
ST Microelectronics |
18514 |
ECMF02-4CMX8 |
Common mode filter with ESD protection for USB2.0 interface |
ST Microelectronics |
18515 |
ECMF04-4HSM10 |
Common mode filter with ESD protection for High Speed Serial interface |
ST Microelectronics |
18516 |
ECMF04-4HSWM10 |
Common mode filter with ESD protection for High Speed Serial interfaces |
ST Microelectronics |
18517 |
ECMF06-6AM16 |
Common mode filter with ESD protection for MIPI D-PHY and MDDI interface |
ST Microelectronics |
18518 |
ECMF06-6HSM16 |
Common mode filter with ESD protection for high speed serial interface |
ST Microelectronics |
18519 |
EE-SB5M |
Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment |
Omron |
18520 |
EE-SB5MC |
Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment |
Omron |
18521 |
EE-SB5V |
Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment |
Omron |
18522 |
EE-SB5V-E |
Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment |
Omron |
18523 |
EE-SB5VC |
Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment |
Omron |
18524 |
EFT124 |
Transistor with PNP junctions with germanium, low frequency 350mW |
IPRS Baneasa |
18525 |
EFT125 |
Transistor with PNP junctions with germanium, low frequency 350mW |
IPRS Baneasa |
18526 |
EFT130 |
Transistor with PNP junctions with germanium, low frequency 550mW |
IPRS Baneasa |
18527 |
EFT131 |
Transistor with PNP junctions with germanium, low frequency 550mW |
IPRS Baneasa |
18528 |
EFT212 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
18529 |
EFT213 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
18530 |
EFT214 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
18531 |
EFT238 |
Transistor with PNP junctions with germanium, low frequency 45W |
IPRS Baneasa |
18532 |
EFT239 |
Transistor with PNP junctions with germanium, low frequency 45W |
IPRS Baneasa |
18533 |
EFT240 |
Transistor with PNP junctions with germanium, low frequency 45W |
IPRS Baneasa |
18534 |
EFT250 |
Transistor with PNP junctions with germanium, low frequency 30W |
IPRS Baneasa |
18535 |
EFT306 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
18536 |
EFT307 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
18537 |
EFT308 |
Transistor with PNP junctions with germanium, high frequency 150mW |
IPRS Baneasa |
18538 |
EFT317 |
Drift PNP transistor with germanium, high frequency 150mW |
IPRS Baneasa |
18539 |
EFT319 |
Drift PNP transistor with germanium, high frequency 150mW |
IPRS Baneasa |
18540 |
EFT320 |
Drift PNP transistor with germanium, high frequency 150mW |
IPRS Baneasa |
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