| No. |
Part Name |
Description |
Manufacturer |
| 1861 |
IDT72V223L6BC |
512 x 18 / 1K x 9 SuperSync II FIFO, 3.3V |
IDT |
| 1862 |
IDT72V223L6PF |
512 x 18 / 1K x 9 SuperSync II FIFO, 3.3V |
IDT |
| 1863 |
IDT72V223L6PF8 |
512 x 18 / 1K x 9 SuperSync II FIFO, 3.3V |
IDT |
| 1864 |
IDT72V223L7-5BC |
512 x 18 / 1K x 9 SuperSync II FIFO, 3.3V |
IDT |
| 1865 |
IDT72V223L7-5BCI |
512 x 18 / 1K x 9 SuperSync II FIFO, 3.3V |
IDT |
| 1866 |
IDT72V223L7-5PF |
512 x 18 / 1K x 9 SuperSync II FIFO, 3.3V |
IDT |
| 1867 |
IDT72V223L7-5PF8 |
512 x 18 / 1K x 9 SuperSync II FIFO, 3.3V |
IDT |
| 1868 |
IDT72V223L7-5PFI |
512 x 18 / 1K x 9 SuperSync II FIFO, 3.3V |
IDT |
| 1869 |
IDT72V70210 |
1K x 1K Time Slot Interchange Digital Switch, 3.3V |
IDT |
| 1870 |
IDT72V70210BC |
1K x 1K TSI, 32 I/O at 2Mbps, 3.3V |
IDT |
| 1871 |
IDT72V70210BC8 |
1K x 1K TSI, 32 I/O at 2Mbps, 3.3V |
IDT |
| 1872 |
IDT72V70210DA |
1K x 1K TSI, 32 I/O at 2Mbps, 3.3V |
IDT |
| 1873 |
IDT72V70810 |
1K x 1K Time Slot Interchange Digital Switch, 3.3V |
IDT |
| 1874 |
IDT72V70810PF |
1K x 1K TSI, 8 I/O at 8Mbps, 3.3V |
IDT |
| 1875 |
IDT72V70810PF8 |
1K x 1K TSI, 8 I/O at 8Mbps, 3.3V |
IDT |
| 1876 |
IDT72V70810TF |
1K x 1K TSI, 8 I/O at 8Mbps, 3.3V |
IDT |
| 1877 |
IDT72V70810TF8 |
1K x 1K TSI, 8 I/O at 8Mbps, 3.3V |
IDT |
| 1878 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 1879 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 1880 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 1881 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 1882 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 1883 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 1884 |
K4F151612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 1885 |
K4F151612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 1886 |
KBL10 |
Diode Rectifier Bridge Single 1KV 4A 4-Pin Case KBL Bulk |
New Jersey Semiconductor |
| 1887 |
KBP10 |
Diode Rectifier Bridge Single 1KV 2A 4-Pin(4+Tab) Case KBP |
New Jersey Semiconductor |
| 1888 |
KBP10M |
Diode Rectifier Bridge Single 1KV 1.5A 4-Pin Case KBPM |
New Jersey Semiconductor |
| 1889 |
KBPC610 |
Diode Rectifier Bridge Single 1KV 6A 4-Pin D-72 |
New Jersey Semiconductor |
| 1890 |
KBPC810 |
Diode Rectifier Bridge Single 1KV 8A 4-Pin D-72 |
New Jersey Semiconductor |
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