| No. |
Part Name |
Description |
Manufacturer |
| 1861 |
ISO7242CDWR |
Quad Channel, 2/2, 25Mbps, Digital Isolator 16-SOIC -40 to 125 |
Texas Instruments |
| 1862 |
ISO7242CQDWRQ1 |
Automotive Catalog Quad Channel, 2/2, 25Mbps, Digital Isolator 16-SOIC -40 to 125 |
Texas Instruments |
| 1863 |
ISO7631FC |
4kVpk Low Power Triple Channel, 25Mbps Digital Isolator |
Texas Instruments |
| 1864 |
ISO7631FCDW |
4kVpk Low Power Triple Channel, 25Mbps Digital Isolator 16-SOIC -40 to 125 |
Texas Instruments |
| 1865 |
ISO7631FCDWR |
4kVpk Low Power Triple Channel, 25Mbps Digital Isolator 16-SOIC -40 to 125 |
Texas Instruments |
| 1866 |
ISO7641FC |
4kVpk Low Power Quad Channel, 25Mbps Digital Isolator |
Texas Instruments |
| 1867 |
ISO7641FCDW |
4kVpk Low Power Quad Channel, 25Mbps Digital Isolator 16-SOIC -40 to 125 |
Texas Instruments |
| 1868 |
ISO7641FCDWR |
4kVpk Low Power Quad Channel, 25Mbps Digital Isolator 16-SOIC -40 to 125 |
Texas Instruments |
| 1869 |
K4S641632C-TC80 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz |
Samsung Electronic |
| 1870 |
K4S641632C-TL80 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz |
Samsung Electronic |
| 1871 |
K7B321825M |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 1872 |
K7B321825M-QC65 |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 1873 |
K7B321825M-QC65 |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 1874 |
K7B321825M-QC75 |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 1875 |
K7B321825M-QC75 |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 1876 |
K7B323625M |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 1877 |
K7B323625M-QC65 |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 1878 |
K7B323625M-QC65 |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 1879 |
K7B323625M-QC6575 |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 1880 |
K7B323625M-QC75 |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 1881 |
K7B403625M |
128K x 36-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
| 1882 |
K7B801825M |
256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
| 1883 |
K7B803625M |
256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
| 1884 |
K7M163625M / K7M161825M |
512Kx36 & 1Mx18 Flow-Through NtRAM� Data Sheet |
Samsung Electronic |
| 1885 |
K7M163625M / K7M161825M |
512Kx36 & 1Mx18 Flow-Through NtRAM� Data Sheet |
Samsung Electronic |
| 1886 |
K7M321825M |
1Mx36 & 2Mx18 Flow-Through NtRAM |
Samsung Electronic |
| 1887 |
K7M321825M-QC75 |
1Mx36 & 2Mx18-Bit Pipelined NtRAM |
Samsung Electronic |
| 1888 |
K7M323625M |
1Mx36 & 2Mx18 Flow-Through NtRAM |
Samsung Electronic |
| 1889 |
K7M323625M K7M321825M |
1Mx36 & 2Mx18-Bit Flow Through NtRAM� Data Sheet |
Samsung Electronic |
| 1890 |
K7M323625M K7M321825M |
1Mx36 & 2Mx18-Bit Flow Through NtRAM� Data Sheet |
Samsung Electronic |
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