| No. |
Part Name |
Description |
Manufacturer |
| 1861 |
CCF50 |
Metal Film Resistors, Industrial, �� 1%, �� 5% Tolerance |
Vishay |
| 1862 |
CCF50301RFKR36 |
Metal Film Resistors, Industrial, �� 1%, �� 5% Tolerance |
Vishay |
| 1863 |
CFE320A |
Fiber Optic, AlGaAs IRED, TO-46, Metal Can |
Clairex Technologies |
| 1864 |
CFR530 |
Fiber Optic, 5Mb Receiver, TO-46, Metal Can |
Clairex Technologies |
| 1865 |
CFR533 |
Fiber Optic, 5Mb Receiver, TO-46, Metal Can |
Clairex Technologies |
| 1866 |
CFY25 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 1867 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 1868 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 1869 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 1870 |
CGY31 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated) |
Siemens |
| 1871 |
CGY52 |
GaAs MMIC (Two stages monolithic microwave IC MMICAmplifier All gold metallisation) |
Siemens |
| 1872 |
CH1021 |
Metallized paper capacitor |
IPRS Baneasa |
| 1873 |
CIL351 |
0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 100 - 250 hFE. |
Continental Device India Limited |
| 1874 |
CIL352 |
0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 200 - 480 hFE. |
Continental Device India Limited |
| 1875 |
CK100B |
3.000W General Purpose PNP Metal Can Transistor. 50V Vceo, A Ic, 100 - 300 hFE. Complementary CL100B |
Continental Device India Limited |
| 1876 |
CK100S |
3.000W General Purpose PNP Metal Can Transistor. 50V Vceo, A Ic, 20 hFE. |
Continental Device India Limited |
| 1877 |
CL100 |
0.800W General Purpose NPN Metal Can Transistor. V Vceo, A Ic, 50 - 280 hFE. |
Continental Device India Limited |
| 1878 |
CL100A |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 - 120 hFE. Complementary CK100A |
Continental Device India Limited |
| 1879 |
CL100B |
3.000W General Purpose NPN Metal Can Transistor. V Vceo, A Ic, 100 - 300 hFE. Complementary CL100B |
Continental Device India Limited |
| 1880 |
CL100S |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 20 hFE. |
Continental Device India Limited |
| 1881 |
CLD141 |
Silicon Photodiode, TO-46 metal can |
Clairex Technologies |
| 1882 |
CLD141R |
Silicon Photodiode, TO-46 metal can |
Clairex Technologies |
| 1883 |
CLD142 |
Silicon Photodiode, TO-46 metal can |
Clairex Technologies |
| 1884 |
CLD142R |
Silicon Photodiode, TO-46 metal can |
Clairex Technologies |
| 1885 |
CLD156 |
Silicon Photodiode, TO-5 metal can |
Clairex Technologies |
| 1886 |
CLD156R |
Silicon Photodiode, TO-5 metal can |
Clairex Technologies |
| 1887 |
CLD160 |
Silicon Photodiode, TO-5 metal can |
Clairex Technologies |
| 1888 |
CLD185 |
Silicon Photodiode, 3 leaded TO-8 metal can |
Clairex Technologies |
| 1889 |
CLD185R |
Silicon Photodiode, 3 leaded TO-8 metal can |
Clairex Technologies |
| 1890 |
CLD340 |
GaAs Photodidoe, TO-46 metal can |
Clairex Technologies |
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