No. |
Part Name |
Description |
Manufacturer |
1861 |
LX1732 |
High Current PFM Boost Converter |
Microsemi |
1862 |
MAD1103C |
Monolithic diode array. High current/fast switching. |
Motorola |
1863 |
MAD1103F |
Monolithic diode array. High current/fast switching. |
Motorola |
1864 |
MAD1103P |
Monolithic diode array. High current/fast switching. |
Motorola |
1865 |
MAD1107C |
Monolithic diode array. High current/fast switching. |
Motorola |
1866 |
MAD1107F |
Monolithic diode array. High current/fast switching. |
Motorola |
1867 |
MAD1107P |
Monolithic diode array. High current/fast switching. |
Motorola |
1868 |
MAD1108C |
Monolithic diode array. High current/fast switching. |
Motorola |
1869 |
MAD1108F |
Monolithic diode array. High current/fast switching. |
Motorola |
1870 |
MAD1108P |
Monolithic diode array. High current/fast switching. |
Motorola |
1871 |
MAD130C |
Monolithic diode array. High current/fast switching. |
Motorola |
1872 |
MAD130P |
Monolithic diode array. High current/fast switching. |
Motorola |
1873 |
MAX-100 |
91.8V; 20A ;144KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
1874 |
MAX-200 |
181.8V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
1875 |
MAX-225 |
202.5V; 20A ;324KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
1876 |
MAX-260 |
234.5V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
1877 |
MAX-370 |
333V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
1878 |
MAX-422 |
379.8V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
1879 |
MAX-450 |
405.8V; 20A ;648KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
1880 |
MAX-470 |
423V; 20A ;648KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
1881 |
MAX1705 |
1 to 3 Cell, High Current, Low-Noise, Step-Up DC-DC Converters with Linear Regulator |
MAXIM - Dallas Semiconductor |
1882 |
MAX1705EEE+ |
1 to 3 Cell, High Current, Low-Noise, Step-Up DC-DC Converters with Linear Regulator |
MAXIM - Dallas Semiconductor |
1883 |
MAX1705EEE+T |
1 to 3 Cell, High Current, Low-Noise, Step-Up DC-DC Converters with Linear Regulator |
MAXIM - Dallas Semiconductor |
1884 |
MAX1706 |
1 to 3 Cell, High Current, Low-Noise, Step-Up DC-DC Converters with Linear Regulator |
MAXIM - Dallas Semiconductor |
1885 |
MAX1706EEE+ |
1 to 3 Cell, High Current, Low-Noise, Step-Up DC-DC Converters with Linear Regulator |
MAXIM - Dallas Semiconductor |
1886 |
MAX1706EEE+T |
1 to 3 Cell, High Current, Low-Noise, Step-Up DC-DC Converters with Linear Regulator |
MAXIM - Dallas Semiconductor |
1887 |
MAX20-100.0C |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
1888 |
MAX20-100.0CA |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
1889 |
MAX20-110.0C |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
1890 |
MAX20-110.0CA |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
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