| No. |
Part Name |
Description |
Manufacturer |
| 1861 |
AT27BV800-12TI |
8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
Atmel |
| 1862 |
AT27BV800-15JC |
8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
Atmel |
| 1863 |
AT27BV800-15JI |
8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
Atmel |
| 1864 |
AT27BV800-15RC |
8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
Atmel |
| 1865 |
AT27BV800-15RI |
8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
Atmel |
| 1866 |
AT27BV800-15TC |
8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
Atmel |
| 1867 |
AT27BV800-15TI |
8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
Atmel |
| 1868 |
ATL60 |
The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate, oxide isolated, triple level metal process. Extensive cell libraries are available and support the major CAD software tools. |
Atmel |
| 1869 |
B308D |
Unregulated microphone amplifier for piezo microphones, possibly equivalent TAA970 |
RFT |
| 1870 |
B318D |
Regulated microphone amplifier for piezo speech capsules |
RFT |
| 1871 |
BA8201/F |
Communications LSIs > ICs for telephone > Simulated inductance |
ROHM |
| 1872 |
BAS16S |
Silicon Switching Diode Array (For high-speed switching applications Internal (galvanic) isolated Diodes in one package) |
Siemens |
| 1873 |
BAS21PG |
Dual isolated high-voltage switching diode |
Nexperia |
| 1874 |
BAS28 |
DUAL, ISOLATED HIGH SPEED SWITCHING DIODE |
Central Semiconductor |
| 1875 |
BAS28 |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
Siemens |
| 1876 |
BAS28W |
Silicon Switching Diode Array (For high-speed switching applications Electrical insulated diodes) |
Siemens |
| 1877 |
BAS70VV |
BAS70VV; 70 V, 70 mA Schottky barrier triple isolated diode in SOT666 |
Philips |
| 1878 |
BAS70VV |
70 V, 70 mA Schottky barrier triple isolated diode in SOT666 |
Philips |
| 1879 |
BAV99S |
Silicon Switching Diode Array (For high-speed switching applications Connected in series Internal galvanic isolated Diodes in one package) |
Siemens |
| 1880 |
BAW100 |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
Siemens |
| 1881 |
BAW101 |
DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES |
Central Semiconductor |
| 1882 |
BAW101 |
DUAL / ISOLATED HIGH VOLTAGE SWITCHING DIODES |
Central Semiconductor |
| 1883 |
BAW101 |
Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes) |
Siemens |
| 1884 |
BCR08AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 1885 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1886 |
BCR08AS-8 |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 1887 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1888 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1889 |
BCR10CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 1890 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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