| No. |
Part Name |
Description |
Manufacturer |
| 1861 |
UC3527ANG4 |
Regulating Pulse Width Modulators 16-PDIP 0 to 70 |
Texas Instruments |
| 1862 |
UC3527AQ |
Regulating pulse width modulators, 100Hz to 500kHz |
Unitrode |
| 1863 |
UC3527B |
Regulating Pulse Width Modulators |
Texas Instruments |
| 1864 |
UC3527BN |
Regulating Pulse Width Modulators |
Texas Instruments |
| 1865 |
UC494 |
Advanced Regulating Pulse Width Modulators |
Texas Instruments |
| 1866 |
UC494A |
Advanced Regulating Pulse Width Modulators |
Texas Instruments |
| 1867 |
UC494AC |
Advanced Regulating Pulse Width Modulators |
Texas Instruments |
| 1868 |
UC494ACJ |
ADVANCED REGULATING PULSE WIDTH MODULATORS |
Texas Instruments |
| 1869 |
UC494ACN |
ADVANCED REGULATING PULSE WIDTH MODULATORS |
Texas Instruments |
| 1870 |
UC494AJ |
ADVANCED REGULATING PULSE WIDTH MODULATORS |
Texas Instruments |
| 1871 |
UC494AJ883B |
Advanced Regulating Pulse Width Modulators |
Texas Instruments |
| 1872 |
UC494AN |
ADVANCED REGULATING PULSE WIDTH MODULATORS |
Texas Instruments |
| 1873 |
UC495 |
Advanced Regulating Pulse Width Modulators |
Texas Instruments |
| 1874 |
UC495A |
Advanced Regulating Pulse Width Modulators |
Texas Instruments |
| 1875 |
UC495AC |
Advanced Regulating Pulse Width Modulators |
Texas Instruments |
| 1876 |
UC495ACN |
ADVANCED REGULATING PULSE WIDTH MODULATORS |
Texas Instruments |
| 1877 |
V62/06650-01XE |
Enhanced Product 16-Bit 500 Msps 2X-8X Interpolating Dual-Channel Dac 100-HTQFP -55 to 125 |
Texas Instruments |
| 1878 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1879 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1880 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1881 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1882 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1883 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 1884 |
XT49U |
Quartz Crystals 1.8432MHz - 60.0MHz, Optional Third Lead, Optional Insulating Sleeve, Hermetically Sealed |
Vishay |
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