No. |
Part Name |
Description |
Manufacturer |
1861 |
BF680A |
Epitaxial planar PNP transistor intended for use in TV varicap tuners as mixer-oscillator stage up to 900MHz |
SGS-ATES |
1862 |
BF680H |
Epitaxial planar PNP transistor intended for use as UHF oscillator |
SGS-ATES |
1863 |
BF777 |
NPN SILICON RF TRANSISTOR (FOR UHF/VHF FREQUENCY CONVERTERS AND LOCAL OSCILLATORS) |
Siemens |
1864 |
BF961 |
Dual gate, discharge mode, MOS field controlled tetrode |
Mikroelektronikai Vallalat |
1865 |
BF970 |
PNP silicon planar transistor |
Mikroelektronikai Vallalat |
1866 |
BF997 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
1867 |
BFP360W |
RF-Bipolar - NPN Silicon RF transistor in 4pin SOT343 package ideal for Oscillators and VCOs up to 4GHz |
Infineon |
1868 |
BFP405 |
NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz) |
Siemens |
1869 |
BFP420 |
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) |
Siemens |
1870 |
BFP93 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
1871 |
BFP93A |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
1872 |
BFR29 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
1873 |
BFR30 |
N channel junction field effect transistor |
Mullard |
1874 |
BFR31 |
N channel junction field effect transistor |
Mullard |
1875 |
BFR340F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators |
Infineon |
1876 |
BFR340T |
RF-Bipolar - NPN Silicon RF transistor in SC75 package ideal for Low Noise Amplifiers and Oscillators |
Infineon |
1877 |
BFR35 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA) |
Siemens |
1878 |
BFR35AP |
RF-Bipolar - NPN Silicon RF transistor for low distortion broadband amplifiers/oscillators |
Infineon |
1879 |
BFR35AP |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA) |
Siemens |
1880 |
BFR360F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 ideal for Oscillators and VCO Modules up to 4 GHz |
Infineon |
1881 |
BFR360L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Oscillators and VCO Modules up to 4GHz |
Infineon |
1882 |
BFR360T |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 ideal for Oscillators up to 4GHz |
Infineon |
1883 |
BFR380F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Phase Noise Oscillators up to 4GHz |
Infineon |
1884 |
BFR380L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for high IIP3 LNA and Low Phase Noise Oscillators |
Infineon |
1885 |
BFR380T |
RF-Bipolar - NPN Silicon RF transistor in SC75 package ideal for Low Phase Noise Oscillators up to 4GHz |
Infineon |
1886 |
BFR90 |
Silicon N-P-N low power transistor |
Mullard |
1887 |
BFR91 |
NPN silicon planar transistor |
Mikroelektronikai Vallalat |
1888 |
BFR91 |
Silicon N-P-N low power transistor |
Mullard |
1889 |
BFR92 |
Microminiature n-p-n transistor |
Mullard |
1890 |
BFR93 |
Microminiature n-p-n transistor |
Mullard |
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