| No. |
Part Name |
Description |
Manufacturer |
| 1861 |
1N773A |
65 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1862 |
1N774 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1863 |
1N774A |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1864 |
1N775 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1865 |
1N776 |
20 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1866 |
1N777 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1867 |
1N781 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1868 |
1N781A |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1869 |
1N805 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1870 |
1N909 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1871 |
1N910 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1872 |
1N911 |
30 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1873 |
1N914A |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 1874 |
1N914B |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 1875 |
1N916A |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 1876 |
1N916B |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 1877 |
1N933 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 1878 |
1N949 |
60 V, 500 mA, gold bonded diode |
BKC International Electronics |
| 1879 |
1N962B-1 |
11 V, 400 mW silicon zener diode |
BKC International Electronics |
| 1880 |
1N963B-1 |
12 V, 400 mW silicon zener diode |
BKC International Electronics |
| 1881 |
1N964B-1 |
13 V, 400 mW silicon zener diode |
BKC International Electronics |
| 1882 |
1N965B-1 |
15 V, 400 mW silicon zener diode |
BKC International Electronics |
| 1883 |
1N966B-1 |
16 V, 400 mW silicon zener diode |
BKC International Electronics |
| 1884 |
1N967B-1 |
18 V, 400 mW silicon zener diode |
BKC International Electronics |
| 1885 |
1N968B-1 |
20 V, 400 mW silicon zener diode |
BKC International Electronics |
| 1886 |
1N969B-1 |
22 V, 400 mW silicon zener diode |
BKC International Electronics |
| 1887 |
1N970B-1 |
24 V, 400 mW silicon zener diode |
BKC International Electronics |
| 1888 |
1N971B-1 |
27 V, 400 mW silicon zener diode |
BKC International Electronics |
| 1889 |
1N972B-1 |
30 V, 400 mW silicon zener diode |
BKC International Electronics |
| 1890 |
1N973B-1 |
33 V, 400 mW silicon zener diode |
BKC International Electronics |
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