No. |
Part Name |
Description |
Manufacturer |
1861 |
BC559 |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
1862 |
BC559A |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
1863 |
BC559B |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
1864 |
BC559C |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
1865 |
BC560 |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
1866 |
BC560A |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
1867 |
BC560B |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
1868 |
BC560C |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
1869 |
BELASIGNA250 |
Programmable Audio Processing System for Ultra-Low-Power Embedded and Portable Digital Audio |
ON Semiconductor |
1870 |
BFP180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
1871 |
BFP180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
1872 |
BFP280 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
1873 |
BFP280W |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
1874 |
BFR180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
1875 |
BFR180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
1876 |
BFR280 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
1877 |
BFR280W |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems |
Siemens |
1878 |
BFR84 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
1879 |
BFS28 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
1880 |
BFS480 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
1881 |
BSV81 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
1882 |
CA3021 |
Low-Power Video and Wideband Amplifier |
RCA Solid State |
1883 |
CA3022 |
Low-Power Video and Wideband Amplifier |
RCA Solid State |
1884 |
CA3023 |
Low-Power Video and Wideband Amplifier |
RCA Solid State |
1885 |
CA3127E |
High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz. |
General Electric Solid State |
1886 |
CA3127F |
High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz. |
General Electric Solid State |
1887 |
CA3127H |
High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz. |
General Electric Solid State |
1888 |
CA3227 |
High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz |
Intersil |
1889 |
CA3227E |
High-frequency N-P-N transistor array. For low-power applications at frequencies up to 1.5 GHz. |
General Electric Solid State |
1890 |
CA3227E |
High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz |
Intersil |
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