No. |
Part Name |
Description |
Manufacturer |
1891 |
GM71C17800C |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
1892 |
GM71C17800C-5 |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
1893 |
GM71C17800C-6 |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
1894 |
GM71C17800C-7 |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
1895 |
GM71C17800CJ |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
1896 |
GM71C17800CJ-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns |
Hynix Semiconductor |
1897 |
GM71C17800CJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
1898 |
GM71C17800CJ-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns |
Hynix Semiconductor |
1899 |
GM71C17800CLJ-5 |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
1900 |
GM71C17800CLJ-6 |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
1901 |
GM71C17800CLJ-7 |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
1902 |
GM71C17800CLT-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
1903 |
GM71C17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
1904 |
GM71C17800CLT-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
1905 |
GM71C17800CT-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns |
Hynix Semiconductor |
1906 |
GM71C17800CT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
1907 |
GM71C17800CT-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns |
Hynix Semiconductor |
1908 |
GM71CS17800CJ-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns |
Hynix Semiconductor |
1909 |
GM71CS17800CJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
1910 |
GM71CS17800CJ-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns |
Hynix Semiconductor |
1911 |
GM71CS17800CLJ-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
1912 |
GM71CS17800CLJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
1913 |
GM71CS17800CLJ-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
1914 |
GM71CS17800CLT-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
1915 |
GM71CS17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
1916 |
GM71CS17800CLT-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
1917 |
GM71CS17800CT-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns |
Hynix Semiconductor |
1918 |
GM71CS17800CT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
1919 |
GM71CS17800CT-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns |
Hynix Semiconductor |
1920 |
GM72V66841CLT |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
etc |
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