| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
ENA1573 |
Planar Ultrafast Rectifier, Fast trr type, 3A, 600V, 50ns, TP/TP-FA |
ON Semiconductor |
| 1892 |
ENA1574 |
Planar Ultrafast Rectifier, Fast trr type, 5A, 600V, 50ns, TP/TP-FA |
ON Semiconductor |
| 1893 |
ENA1704 |
Planar Ultrafast Rectifier, Fast trr type, 1A, 600V, 50ns, TP/TP-FA |
ON Semiconductor |
| 1894 |
ENA1705 |
Planar Ultrafast Rectifier, Low VF type, 5A, 600V, 1.3V, TP/TP-FA |
ON Semiconductor |
| 1895 |
ENA1745 |
Planar Ultrafast Rectifier, Low VF type, 10A, 600V, 1.3V, TO-220F-2FS |
ON Semiconductor |
| 1896 |
ENA1769 |
N-Channel Power MOSFET, 600V, 23A, 0.36 Ohm, TO-3P-3L |
ON Semiconductor |
| 1897 |
ENA1817 |
Schottky Barrier Diode, 100V, 8A, Low IR, Monolithic Dual TP Common Cathode |
ON Semiconductor |
| 1898 |
ENA1832 |
Planar Ultrafast Rectifier, Fast trr type, 20A, 600V, 50ns, TO-220F-2FS |
ON Semiconductor |
| 1899 |
ENA1837 |
Bipolar Transistor, 200V, 0.7A, Low VCE(sat), NPN Single TO-126ML |
ON Semiconductor |
| 1900 |
ENA1845 |
Planar Ultrafast Rectifier, Low VF type, 20A, 600V, 1.4V, TO-220F-2FS |
ON Semiconductor |
| 1901 |
ENA1851 |
Planar Ultrafast Rectifier, Fast trr type, 5A, 400V, 50ns, TP/TP-FA |
ON Semiconductor |
| 1902 |
ENA1862 |
N-Channel IGBT, 400V, 150A, VCE(sat);4.2V, Single ECH8 |
ON Semiconductor |
| 1903 |
ENA1896 |
N-Channel Power MOSFET, 100V, 9A, 225mOhm, Single TP/TP-FA |
ON Semiconductor |
| 1904 |
ENA1897 |
N-Channel Power MOSFET, 100V, 17A, 111mOhm, Single TP/TP-FA |
ON Semiconductor |
| 1905 |
ENA1903 |
N-Channel Power MOSFET, 500V, 5.5A, 2Ohm, ATPAK |
ON Semiconductor |
| 1906 |
ENA1967 |
N-Channel Power MOSFET, 1700V, 3A, 10.5Ohm, TO-3PF-3L |
ON Semiconductor |
| 1907 |
ENA2066 |
Power MOSFET, 100V, 2A, 225mOhm, -100V, -2A, 300mOhm, Complementary Dual SOIC8 |
ON Semiconductor |
| 1908 |
ENA2066 |
Power MOSFET, 100V, 2A, 225mOhm, -100V, -2A, 300mOhm, Complementary Dual SOIC8 |
ON Semiconductor |
| 1909 |
ENA2196 |
N-Channel IGBT 600V, 20A, VCE(sat);1.45V TO-3PF-3L with Low VF Switching Diode |
ON Semiconductor |
| 1910 |
ENA2207 |
N-Channel Power MOSFET, 600V, 1.0A, 13ohm, Single TP/TP-FA |
ON Semiconductor |
| 1911 |
ENA2209 |
N-Channel IGBT 400V, 150A, VCE(sat); 3.8V Single ECH8 |
ON Semiconductor |
| 1912 |
ENA2212 |
N-Channel Power MOSFET 500V, 26A, 0.26 Ohm, TO-3P-3L |
ON Semiconductor |
| 1913 |
ENA2218 |
N-Channel Power MOSFET 1500V, 2.5A, 10.5 Ohm, TO-3PF-3L |
ON Semiconductor |
| 1914 |
ENA2219 |
N-Channel IGBT, 600V, 12A, VCE(sat)=1.4V, TO-3PF-3L |
ON Semiconductor |
| 1915 |
ENA2232 |
N-Channel Power MOSFET, 1500V, 2.5A, 10.5Ohm TO-220F-3FS |
ON Semiconductor |
| 1916 |
ENA2235 |
N-Channel Power MOSFET, 1500V, 2.5A, 10.5Ω, TO-3P-3L |
ON Semiconductor |
| 1917 |
ENA2236 |
N-Channel Power MOSFET, 1500V, 0.1A, 150Ω, TO-220F-3FS |
ON Semiconductor |
| 1918 |
F1772-3000 TO 3901 |
Class X2, AC300V, for Printed Circuit Boards |
Vishay |
| 1919 |
F1772-3200 TO 3961 |
Class X2, AC300V, for Printed Circuit Boards |
Vishay |
| 1920 |
F1774-3000 TO 3400 |
Class X2, AC300V, Insulated Leads |
Vishay |
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