| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
2SB856 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 1892 |
2SB857 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1893 |
2SB858 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1894 |
2SB859 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1895 |
2SB860 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1896 |
2SB861 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1897 |
2SB894 |
Si PNP epitaxial planar. AF amplifier. |
Panasonic |
| 1898 |
2SB895 |
Si PNP epitaxial planar darlington. AF amplifier. |
Panasonic |
| 1899 |
2SB895A |
Si PNP epitaxial planar darlington. AF amplifier. |
Panasonic |
| 1900 |
2SB902 |
Si PNP epitaxial planar. General amplifier. |
Panasonic |
| 1901 |
2SB905 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications |
TOSHIBA |
| 1902 |
2SB906 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS). AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1903 |
2SB907 |
Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications |
TOSHIBA |
| 1904 |
2SB908 |
Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications |
TOSHIBA |
| 1905 |
2SB945 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
| 1906 |
2SC0829 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 1907 |
2SC1000 |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
| 1908 |
2SC1000G |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
| 1909 |
2SC1008 |
Medium Power Amplifiers and Switches |
Unknow |
| 1910 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 1911 |
2SC1009 |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 1912 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 1913 |
2SC1009A |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 1914 |
2SC1009R |
NPN silicon epitaxial transistor, FM/AM RF amplifier, mixer, oscillator, converter |
NEC |
| 1915 |
2SC1047 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 1916 |
2SC1059 |
Transistor Silicon NPN Triple Diffused LTP, intended for use in Class A Output Amplifier |
Hitachi Semiconductor |
| 1917 |
2SC1060 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
| 1918 |
2SC1060 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671 |
Unknow |
| 1919 |
2SC1060 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SA670 and 2SA671 |
Unknow |
| 1920 |
2SC1061 |
Silicon NPN Triple Diffused Transistor, intended for use in 10~20 HiFi OTL Amplifier |
Hitachi Semiconductor |
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