No. |
Part Name |
Description |
Manufacturer |
1891 |
K4M64163PH-RBF1L |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
1892 |
K4M64163PH-RBF75 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
1893 |
K4M64163PH-RBF90 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
1894 |
K4M64163PH-RF1L |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
1895 |
K4M64163PH-RF75 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
1896 |
K4M64163PH-RF90 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
1897 |
K4M64163PH-RG |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
1898 |
K4N26323AE |
128Mbit GDDR2 SDRAM |
Samsung Electronic |
1899 |
K4N26323AE-GC20 |
128Mbit GDDR2 SDRAM |
Samsung Electronic |
1900 |
K4N26323AE-GC22 |
128Mbit GDDR2 SDRAM |
Samsung Electronic |
1901 |
K4N26323AE-GC25 |
128Mbit GDDR2 SDRAM |
Samsung Electronic |
1902 |
K4N56163QF |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
1903 |
K4N56163QF-GC |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
1904 |
K4N56163QF-GC25 |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
1905 |
K4N56163QF-GC30 |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
1906 |
K4N56163QF-GC37 |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
1907 |
K4R271669A |
Direct RDRAM |
Samsung Electronic |
1908 |
K4R271669A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
1909 |
K4R271669A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
1910 |
K4R271669A-NB(M)CCG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
1911 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
1912 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
1913 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
1914 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
1915 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
1916 |
K4R271669AN-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
1917 |
K4R271669B |
Direct RDRAM |
Samsung Electronic |
1918 |
K4R271669B |
Direct RDRAM� Data Sheet |
Samsung Electronic |
1919 |
K4R271669B-MCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
1920 |
K4R271669B-MCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
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