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Datasheets for AMSUNG

Datasheets found :: 9668
Page: | 60 | 61 | 62 | 63 | 64 | 65 | 66 | 67 | 68 |
No. Part Name Description Manufacturer
1891 K4M64163PH-RBF1L 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP Samsung Electronic
1892 K4M64163PH-RBF75 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP Samsung Electronic
1893 K4M64163PH-RBF90 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP Samsung Electronic
1894 K4M64163PH-RF1L 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP Samsung Electronic
1895 K4M64163PH-RF75 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP Samsung Electronic
1896 K4M64163PH-RF90 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP Samsung Electronic
1897 K4M64163PH-RG 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP Samsung Electronic
1898 K4N26323AE 128Mbit GDDR2 SDRAM Samsung Electronic
1899 K4N26323AE-GC20 128Mbit GDDR2 SDRAM Samsung Electronic
1900 K4N26323AE-GC22 128Mbit GDDR2 SDRAM Samsung Electronic
1901 K4N26323AE-GC25 128Mbit GDDR2 SDRAM Samsung Electronic
1902 K4N56163QF 256Mbit gDDR2 SDRAM Samsung Electronic
1903 K4N56163QF-GC 256Mbit gDDR2 SDRAM Samsung Electronic
1904 K4N56163QF-GC25 256Mbit gDDR2 SDRAM Samsung Electronic
1905 K4N56163QF-GC30 256Mbit gDDR2 SDRAM Samsung Electronic
1906 K4N56163QF-GC37 256Mbit gDDR2 SDRAM Samsung Electronic
1907 K4R271669A Direct RDRAM Samsung Electronic
1908 K4R271669A-N(M)CK7 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
1909 K4R271669A-N(M)CK8 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
1910 K4R271669A-NB(M)CCG6 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
1911 K4R271669AM-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
1912 K4R271669AM-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
1913 K4R271669AM-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
1914 K4R271669AN-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Samsung Electronic
1915 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
1916 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
1917 K4R271669B Direct RDRAM Samsung Electronic
1918 K4R271669B Direct RDRAM� Data Sheet Samsung Electronic
1919 K4R271669B-MCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
1920 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic


Datasheets found :: 9668
Page: | 60 | 61 | 62 | 63 | 64 | 65 | 66 | 67 | 68 |



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