| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
BF513 |
N-channel silicon field-effect transistors |
Philips |
| 1892 |
BF519 |
Tranzystor wielkiej cz�stotliwo�ci |
Ultra CEMI |
| 1893 |
BF520 |
Tranzystor wielkiej cz�stotliwo�ci |
Ultra CEMI |
| 1894 |
BF521 |
Tranzystor wielkiej cz�stotliwo�ci |
Ultra CEMI |
| 1895 |
BF545A |
N-channel silicon junction field-effect transistors |
Philips |
| 1896 |
BF545B |
N-channel silicon junction field-effect transistors |
Philips |
| 1897 |
BF545C |
N-channel silicon junction field-effect transistors |
Philips |
| 1898 |
BF556A |
N-channel silicon junction field-effect transistors |
Philips |
| 1899 |
BF556B |
N-channel silicon junction field-effect transistors |
Philips |
| 1900 |
BF556C |
N-channel silicon junction field-effect transistors |
Philips |
| 1901 |
BF599 |
NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion) |
Siemens |
| 1902 |
BF619 |
Tranzystor wielkiej cz�stotliwo�ci |
Ultra CEMI |
| 1903 |
BF620 |
Tranzystor wielkiej cz�stotliwo�ci |
Ultra CEMI |
| 1904 |
BF621 |
Tranzystor wielkiej cz�stotliwo�ci |
Ultra CEMI |
| 1905 |
BF840 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
| 1906 |
BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
| 1907 |
BF960 |
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE |
Vishay |
| 1908 |
BF961 |
Dual gate, discharge mode, MOS field controlled tetrode |
Mikroelektronikai Vallalat |
| 1909 |
BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
TEMIC |
| 1910 |
BF961 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 1911 |
BF961A |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 1912 |
BF961B |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 1913 |
BF964 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 1914 |
BF964S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 1915 |
BF966S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 1916 |
BF988 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 1917 |
BF994 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 1918 |
BF994S |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 1919 |
BF994SA |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 1920 |
BF994SB |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| | | |
