No. |
Part Name |
Description |
Manufacturer |
1891 |
IKW75N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... |
Infineon |
1892 |
IMBD4148 |
Small Signal Diodes |
General Semiconductor |
1893 |
IMBD4148 |
Small Signal Diode |
Vishay |
1894 |
IMBD4448 |
Small Signal Diodes |
General Semiconductor |
1895 |
IMBD4448 |
Small Signal Diode |
Vishay |
1896 |
ISL9K1560G3 |
15A, 600V Stealth TM Dual Diode |
Fairchild Semiconductor |
1897 |
ISL9K18120G3 |
18A, 1200V Stealth Dual Diode |
Fairchild Semiconductor |
1898 |
ISL9K30120G3 |
30A, 1200V Stealth Dual Diode |
Fairchild Semiconductor |
1899 |
ISL9K3060G3 |
30A, 600V Stealth Dual Diode |
Fairchild Semiconductor |
1900 |
ISL9K3060G3_NL |
30A, 600V Stealth Dual Diode |
Fairchild Semiconductor |
1901 |
ISL9K460P3 |
4A,600V Stealth Dual Diode |
Fairchild Semiconductor |
1902 |
ISL9K8120P3 |
8A, 1200V Stealth Dual Diode |
Fairchild Semiconductor |
1903 |
ISL9K860P3 |
8A, 600V Stealth Dual Diode |
Fairchild Semiconductor |
1904 |
IXDH20N120 |
High Voltage IGBT with optional Diode |
IXYS Corporation |
1905 |
IXDH20N120D1 |
High Voltage IGBT with optional Diode |
IXYS Corporation |
1906 |
IXDH35N60B |
IGBT with optional Diode |
IXYS Corporation |
1907 |
IXDH35N60BD1 |
IGBT with optional Diode |
IXYS Corporation |
1908 |
IXDP35N60B |
IGBT with optional Diode |
IXYS Corporation |
1909 |
IXKF40N60SCD1 |
CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC |
IXYS Corporation |
1910 |
J1N4148 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
1911 |
J1N4149 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
1912 |
J1N4150 |
Silicon signal diode, high current (chip) |
SESCOSEM |
1913 |
J1N4151 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
1914 |
J1N4446 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
1915 |
J1N4447 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
1916 |
J1N4448 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
1917 |
J1N4449 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
1918 |
J1N456 |
Silicon signal diode, general purpose (chips) |
SESCOSEM |
1919 |
J1N456A |
Silicon signal diode, general purpose (chips) |
SESCOSEM |
1920 |
J1N457 |
Silicon signal diode, general purpose (chips) |
SESCOSEM |
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