No. |
Part Name |
Description |
Manufacturer |
1891 |
IRF821 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
1892 |
IRF821 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
1893 |
IRF822 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
1894 |
IRF822 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
1895 |
IRF823 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
1896 |
IRF823 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
1897 |
IRF830 |
4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
1898 |
IRF830 |
4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
1899 |
IRF831 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
1900 |
IRF832 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
1901 |
IRF833 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
1902 |
IRF840 |
8A, 500V, 0.850 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
1903 |
IRF840 |
8A/ 500V/ 0.850 Ohm/ N-Channel Power MOSFET |
Intersil |
1904 |
IRF840 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
1905 |
IRF840A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
1906 |
IRF841 |
N-Channel Power MOSFETs/ 8A/ 450 V/500V |
Fairchild Semiconductor |
1907 |
IRF841 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
1908 |
IRF842 |
N-Channel Power MOSFETs/ 8A/ 450 V/500V |
Fairchild Semiconductor |
1909 |
IRF843 |
N-Channel Power MOSFETs/ 8A/ 450 V/500V |
Fairchild Semiconductor |
1910 |
IRF9130 |
12A/ -100V/ 0.30 Ohm/ P-Channel Power MOSFET |
Intersil |
1911 |
IRF9130 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
1912 |
IRF9130 |
P-CHANNEL POWER MOSFET |
SemeLAB |
1913 |
IRF9130SMD |
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
SemeLAB |
1914 |
IRF9131 |
-10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs |
Intersil |
1915 |
IRF9131 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
1916 |
IRF9132 |
-10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs |
Intersil |
1917 |
IRF9132 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
1918 |
IRF9133 |
-10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs |
Intersil |
1919 |
IRF9133 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
1920 |
IRF9140 |
19A/ -100V/ 0.200 Ohm/ P-Channel Power MOSFET |
Intersil |
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