| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
1N5523AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1892 |
1N5523AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1893 |
1N5523B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1894 |
1N5523B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 1895 |
1N5523B |
Low Voltage Avalanche Zener |
Microsemi |
| 1896 |
1N5523B |
Low Voltage Avalanche Zener |
Microsemi |
| 1897 |
1N5523B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.1V ±5% tolerance |
Motorola |
| 1898 |
1N5523B (DO35) |
Low Voltage Avalanche Zener |
Microsemi |
| 1899 |
1N5523B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1900 |
1N5523B-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1901 |
1N5523B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1902 |
1N5523BUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1903 |
1N5523BUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1904 |
1N5523C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 1905 |
1N5523C-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1906 |
1N5523C-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1907 |
1N5523CUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1908 |
1N5523CUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1909 |
1N5523D |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 1910 |
1N5523D-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1911 |
1N5523D-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1912 |
1N5523DUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1913 |
1N5523DUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1914 |
1N5524 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 1915 |
1N5524 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1916 |
1N5524 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1917 |
1N5524 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1918 |
1N5524 |
Low Voltage Avalanche Zener |
Microsemi |
| 1919 |
1N5524 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.6V ±20% tolerance |
Motorola |
| 1920 |
1N5524A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
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