| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
RPT-86 |
Low Power PCM repeaters |
Precision Monolithics |
| 1892 |
RPT-87 |
Low Power PCM repeaters |
Precision Monolithics |
| 1893 |
RPT82 |
PCM repeaters |
Precision Monolithics |
| 1894 |
RPT82FQ |
PCM repeaters |
Precision Monolithics |
| 1895 |
RPT82FS |
PCM repeaters |
Precision Monolithics |
| 1896 |
RPT83 |
PCM repeaters |
Precision Monolithics |
| 1897 |
RPT83FQ |
PCM repeaters |
Precision Monolithics |
| 1898 |
RPT83FS |
PCM repeaters |
Precision Monolithics |
| 1899 |
RPT85 |
PCM REPEATER |
Precision Monolithics |
| 1900 |
RPT86 |
Low Power PCM repeaters |
Precision Monolithics |
| 1901 |
RPT86FP |
Low Power PCM repeaters |
Precision Monolithics |
| 1902 |
RPT86FQ |
Low Power PCM repeaters |
Precision Monolithics |
| 1903 |
RPT86FS |
Low Power PCM repeaters |
Precision Monolithics |
| 1904 |
RPT87 |
Low Power PCM repeaters |
Precision Monolithics |
| 1905 |
RPT87FP |
Low Power PCM repeaters |
Precision Monolithics |
| 1906 |
RPT87FQ |
Low Power PCM repeaters |
Precision Monolithics |
| 1907 |
RPT87FS |
Low Power PCM repeaters |
Precision Monolithics |
| 1908 |
S1T2410B01 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 1909 |
S1T2410B01-D0B0 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 1910 |
S1T2410B02 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 1911 |
S1T2410B02-D0B0 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
| 1912 |
S6200A |
Thyristor. Silicon controlled rectifier. 20A RMS. Repetitive peak off-state and repetitive peak reverse voltage 100 V. |
Motorola |
| 1913 |
S6200A |
Thyristor. Silicon controlled rectifier. 20A RMS. Repetitive peak off-state and repetitive peak reverse voltage 100 V. |
Motorola |
| 1914 |
S6200B |
Thyristor. Silicon controlled rectifier. 20A RMS. Repetitive peak off-state and repetitive peak reverse voltage 200 V. |
Motorola |
| 1915 |
S6200B |
Thyristor. Silicon controlled rectifier. 20A RMS. Repetitive peak off-state and repetitive peak reverse voltage 200 V. |
Motorola |
| 1916 |
S6200D |
Thyristor. Silicon controlled rectifier. 20A RMS. Repetitive peak off-state and repetitive peak reverse voltage 400 V. |
Motorola |
| 1917 |
S6200D |
Thyristor. Silicon controlled rectifier. 20A RMS. Repetitive peak off-state and repetitive peak reverse voltage 400 V. |
Motorola |
| 1918 |
S6200M |
Thyristor. Silicon controlled rectifier. 20A RMS. Repetitive peak off-state and repetitive peak reverse voltage 600 V. |
Motorola |
| 1919 |
S6200M |
Thyristor. Silicon controlled rectifier. 20A RMS. Repetitive peak off-state and repetitive peak reverse voltage 600 V. |
Motorola |
| 1920 |
S6210A |
Thyristor. Silicon controlled rectifier. Repetitive peak off-state voltage 100 V. RMS on-state current 20 A. |
Motorola |
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