| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
CFK0301-AK-000T |
900 MHz, high dynamic range dual, low-noise GaAs FET |
CELERITEK |
| 1892 |
CFK2062-P1 |
800 to 900 MHz, +30 dBm, power GaAs FET |
CELERITEK |
| 1893 |
CFK2062-P1-000T |
800 to 900 MHz, +30 dBm, power GaAs FET |
CELERITEK |
| 1894 |
CFK2162-P1 |
800 to 900 MHz, +34 dBm, power GaAs FET |
CELERITEK |
| 1895 |
CFK2162-P1-000T |
800 to 900 MHz, +34 dBm, power GaAs FET |
CELERITEK |
| 1896 |
CFK2162-P5 |
2.3 to 2.5 GHz +34 dBm Power GaAs FET |
CELERITEK |
| 1897 |
CFK2162-P5-000T |
2.3 to 2.5 GHz +34 dBm Power GaAs FET |
CELERITEK |
| 1898 |
CFX13 |
N-CHANNEL Low-Noise Ku-BAND GaAs FET |
Philips |
| 1899 |
CFX13X |
N-CHANNEL Low-Noise Ku-BAND GaAs FET, chip version |
Philips |
| 1900 |
CFX21 |
N-CHANNEL Low-Power X-BAND GaAs FET |
Philips |
| 1901 |
CFX21X |
N-CHANNEL Low-Power X-BAND GaAs FET, chip version |
Philips |
| 1902 |
CFX30 |
N-CHANNEL Medium-Power GaAs FET |
Philips |
| 1903 |
CFX30X |
N-CHANNEL Medium-Power GaAs FET, chip version |
Philips |
| 1904 |
CFX31 |
N-CHANNEL Medium-Power GaAs FET |
Philips |
| 1905 |
CFX31X |
N-CHANNEL Medium-Power GaAs FET, chip version |
Philips |
| 1906 |
CFX32 |
N-CHANNEL Medium-Power GaAs FET |
Philips |
| 1907 |
CFX32X |
N-CHANNEL Medium-Power GaAs FET, chip version |
Philips |
| 1908 |
CFX33 |
N-CHANNEL Medium-Power GaAs FET |
Philips |
| 1909 |
CFX33X |
N-CHANNEL Medium-Power GaAs FET, chip version |
Philips |
| 1910 |
CFY25 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 1911 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 1912 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 1913 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 1914 |
CFY30 |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
Siemens |
| 1915 |
CFY35 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| 1916 |
CFY35-20 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| 1917 |
CFY35-23 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| 1918 |
CLY10 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 1919 |
CLY15 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 1920 |
CLY2 |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
Siemens |
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