| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
2SK2802 |
Silicon N Channel MOS FET Low Frequency Power Switching |
Hitachi Semiconductor |
| 1892 |
2SK2881 |
For Low Frequency Amplify Application N Channel Junction type Micro(Frame type) |
Isahaya Electronics Corporation |
| 1893 |
2SK30 |
Low-Frequency Amp Applications |
SANYO |
| 1894 |
2SK3000 |
Silicon N Channel MOS FET Low Frequency Power Switching |
Hitachi Semiconductor |
| 1895 |
2SK303 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1896 |
2SK304 |
N-Channel Silicon MOSFET Low-Frequency Aplifier Applications |
SANYO |
| 1897 |
2SK368 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency and High Voltage Amplifier Applications Constant Current Applications |
TOSHIBA |
| 1898 |
2SK3756 |
Radio-frequency power MOSFET |
TOSHIBA |
| 1899 |
2SK3856 |
High-Frequency MOSFETs |
SANYO |
| 1900 |
2SK4037 |
Radio-frequency power MOSFET |
TOSHIBA |
| 1901 |
2SK436 |
High-Frequency,Low-Frequency General-Purpose Amp Applications |
SANYO |
| 1902 |
2SK436 |
High-Frequency,Low-Frequency General-Purpose Amp Applications |
SANYO |
| 1903 |
2SK511 |
HIGH FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 1904 |
2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 1905 |
2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 1906 |
2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 1907 |
2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 1908 |
2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 1909 |
2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 1910 |
2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 1911 |
2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 1912 |
2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 1913 |
2SK771 |
Low-Frequency General-Purpose Amp Applications |
SANYO |
| 1914 |
2SK880 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 1915 |
2SK930 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 1916 |
2SK932 |
N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 1917 |
2SK937 |
N-Channel Junction Silicon FET High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1918 |
2T6551 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 1919 |
3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
| 1920 |
31M327 |
STANDARD LOW FREQUENCY SMD CRYSTALS |
Unknow |
| | | |
