| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
KM44C4100C |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 1892 |
KM44C4100CK-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 1893 |
KM44C4100CK-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 1894 |
KM44C4100CKL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 1895 |
KM44C4100CKL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 1896 |
KM44C4100CS-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 1897 |
KM44C4100CS-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 1898 |
KM44C4100CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 1899 |
KM44C4100CSL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 1900 |
KM44C4104A-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 1901 |
KM44C4104A-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 1902 |
KM44C4104A-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 1903 |
KM44C4104A-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 1904 |
KM44C4104AL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 1905 |
KM44C4104AL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 1906 |
KM44C4104AL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 1907 |
KM44C4104AL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 1908 |
KM44C4104ALL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 1909 |
KM44C4104ALL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 1910 |
KM44C4104ALL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 1911 |
KM44C4104ALL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 1912 |
KM44C4104ASL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 1913 |
KM44C4104ASL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 1914 |
KM44C4104ASL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 1915 |
KM44C4104ASL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 1916 |
KM44V1000D |
1M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 1917 |
KM44V1000DJ-6 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 1918 |
KM44V1000DJ-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 1919 |
KM44V1000DJL-6 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 1920 |
KM44V1000DJL-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
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