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Datasheets for IGH

Datasheets found :: 186374
Page: | 632 | 633 | 634 | 635 | 636 | 637 | 638 | 639 | 640 |
No. Part Name Description Manufacturer
19051 AM7204A-35PC HIGH DENSITY FIRST-IN FIRST-OUT(FIFO) 4096 x 9-BIT CMOS MEMORY Advanced Micro Devices
19052 AM7204A-35PC HIGH DENSITY FIRST-IN FIRST-OUT(FIFO) 4096 x 9-BIT CMOS MEMORY Advanced Micro Devices
19053 AM7204A-35RC HIGH DENSITY FIRST-IN FIRST-OUT(FIFO) 4096 x 9-BIT CMOS MEMORY Advanced Micro Devices
19054 AM7204A-50JC HIGH DENSITY FIRST-IN FIRST-OUT(FIFO) 4096 x 9-BIT CMOS MEMORY Advanced Micro Devices
19055 AM7204A-50PC HIGH DENSITY FIRST-IN FIRST-OUT(FIFO) 4096 x 9-BIT CMOS MEMORY Advanced Micro Devices
19056 AM7204A-50RC HIGH DENSITY FIRST-IN FIRST-OUT(FIFO) 4096 x 9-BIT CMOS MEMORY Advanced Micro Devices
19057 AM80610-018 High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz SGS Thomson Microelectronics
19058 AM80610-050 High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz SGS Thomson Microelectronics
19059 AM82223-004 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
19060 AM82223-012 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
19061 AM82223-014 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
19062 AM82223-018 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
19063 AM82223-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
19064 AM82324-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
19065 AM82325-040 High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz SGS Thomson Microelectronics
19066 AM82327-004 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
19067 AM82327-006 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
19068 AM82327-010 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
19069 AM82327-015 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
19070 AM82729-030 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
19071 AM82729-060 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
19072 AM82731-075 High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
19073 AM82931-055 High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
19074 AM82931-055N High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
19075 AM82931-055S High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
19076 AMC-119SMA 30-250 MHz, high performance amplifier, 8 dB gain MA-Com
19077 AMC-119SMA High Performance Amplifier, 8 dB Gain, 30 - 250 MHz Tyco Electronics
19078 AMC-123 High Performance Amplifier, 10 dB Gain 5 - 500 MHz Tyco Electronics
19079 AMC-123SMA 5-500 MHz, high performance amplifier, 10 dB gain MA-Com
19080 AMC-123SMA High Performance Amplifier, 10 dB Gain 5 - 500 MHz Tyco Electronics


Datasheets found :: 186374
Page: | 632 | 633 | 634 | 635 | 636 | 637 | 638 | 639 | 640 |



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