No. |
Part Name |
Description |
Manufacturer |
1921 |
BFS466L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
1922 |
BFS469L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
1923 |
BFS480 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR180W) for low noise, low power amplifiers |
Infineon |
1924 |
BFS480 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
1925 |
BFS481 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR181W) for low noise, high gain broadband amplifiers |
Infineon |
1926 |
BFS482 |
NPN Silicon RF Transistor for low noi... |
Infineon |
1927 |
BFS483 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR183W) for low noise, high gain broadband amplifiers |
Infineon |
1928 |
BFT47 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
1929 |
BFT48 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
1930 |
BFT49 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
1931 |
BFT66 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
1932 |
BFT67 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
1933 |
BFT72 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
1934 |
BFT73 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
1935 |
BFT74 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
1936 |
BFW92 |
NPN high-frequency transistor, low noise over a wide current range, very high power gain and good intermodulation |
Philips |
1937 |
BFX31 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
1938 |
BFX37 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
1939 |
BFY193 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.) |
Siemens |
1940 |
BFY196 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.) |
Siemens |
1941 |
BFY76 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
1942 |
BGA2011 |
900 MHz high linear low noise amplifier |
NXP Semiconductors |
1943 |
BGA2011 |
900 MHz high linear low noise amplifier |
Philips |
1944 |
BGA2012 |
1900 MHz high linear low noise amplifier |
NXP Semiconductors |
1945 |
BGA2012 |
1900 MHz high linear low noise amplifier |
Philips |
1946 |
BGA622 |
Silicon MMICs - SiGe Ultra Low Noise Amplifier G = 15dB, NF=1.1dB, 50Ohm, SOT343 |
Infineon |
1947 |
BGA622GPS |
GPS Low Noise Amplifier using BGA622 |
Infineon |
1948 |
BGB540LNA |
BGB540 as a 1.85 GHz Low Noise Amplifier |
Infineon |
1949 |
BGU7003 |
Wideband silicon germanium low noise amplifier MMIC |
NXP Semiconductors |
1950 |
BGU7004 |
SiGe:C Low Noise Amplifier MMIC for GPS |
NXP Semiconductors |
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