No. |
Part Name |
Description |
Manufacturer |
1921 |
BC309 |
Silicon p-n-p low power transistor |
Mullard |
1922 |
BC327 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
1923 |
BC328 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
1924 |
BC337 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
1925 |
BC338 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
1926 |
BC413 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
1927 |
BC414 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
1928 |
BC415 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
1929 |
BC416 |
Silicon planar-epitaxial transistor, low frequency, low power PNP |
IPRS Baneasa |
1930 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
1931 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
1932 |
BCR1AM-12 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
1933 |
BCR1AM-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
1934 |
BCR2PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
1935 |
BCR3AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
1936 |
BCR3AS |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
1937 |
BCR3KM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
1938 |
BCR3KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
1939 |
BCR3PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
1940 |
BCR5PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
1941 |
BCY30 |
Silicon p-n-p low power transistor |
Mullard |
1942 |
BCY31 |
Silicon p-n-p low power transistor |
Mullard |
1943 |
BCY32 |
Silicon p-n-p low power transistor |
Mullard |
1944 |
BCY33 |
Silicon p-n-p low power transistor |
Mullard |
1945 |
BCY34 |
Silicon p-n-p low power transistor |
Mullard |
1946 |
BCY38 |
Silicon p-n-p low power transistor |
Mullard |
1947 |
BCY39 |
Silicon p-n-p low power transistor |
Mullard |
1948 |
BCY40 |
Silicon p-n-p low power transistor |
Mullard |
1949 |
BCY54 |
Silicon p-n-p low power transistor |
Mullard |
1950 |
BCY58 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
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