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Datasheets for LOW PO

Datasheets found :: 15955
Page: | 61 | 62 | 63 | 64 | 65 | 66 | 67 | 68 | 69 |
No. Part Name Description Manufacturer
1921 BC309 Silicon p-n-p low power transistor Mullard
1922 BC327 Silicon planar-epitaxial transistor, low frequency, low power PNP IPRS Baneasa
1923 BC328 Silicon planar-epitaxial transistor, low frequency, low power PNP IPRS Baneasa
1924 BC337 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa
1925 BC338 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa
1926 BC413 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa
1927 BC414 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa
1928 BC415 Silicon planar-epitaxial transistor, low frequency, low power PNP IPRS Baneasa
1929 BC416 Silicon planar-epitaxial transistor, low frequency, low power PNP IPRS Baneasa
1930 BCR08AM-14 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
1931 BCR08AS-8 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
1932 BCR1AM-12 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
1933 BCR1AM-8 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
1934 BCR2PM MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
1935 BCR3AM MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
1936 BCR3AS MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
1937 BCR3KM MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
1938 BCR3KM-14 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
1939 BCR3PM MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
1940 BCR5PM MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
1941 BCY30 Silicon p-n-p low power transistor Mullard
1942 BCY31 Silicon p-n-p low power transistor Mullard
1943 BCY32 Silicon p-n-p low power transistor Mullard
1944 BCY33 Silicon p-n-p low power transistor Mullard
1945 BCY34 Silicon p-n-p low power transistor Mullard
1946 BCY38 Silicon p-n-p low power transistor Mullard
1947 BCY39 Silicon p-n-p low power transistor Mullard
1948 BCY40 Silicon p-n-p low power transistor Mullard
1949 BCY54 Silicon p-n-p low power transistor Mullard
1950 BCY58 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa


Datasheets found :: 15955
Page: | 61 | 62 | 63 | 64 | 65 | 66 | 67 | 68 | 69 |



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