| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
1N984 |
0.5W, silicon zener diode. Zener voltage 91V. Test current 1.4mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 1922 |
1N984A |
0.5W, silicon zener diode. Zener voltage 91V. Test current 1.4mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1923 |
1N985 |
0.5W, silicon zener diode. Zener voltage 100V. Test current 1.3mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 1924 |
1N985A |
0.5W, silicon zener diode. Zener voltage 100V. Test current 1.3mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1925 |
1N986 |
0.5W, silicon zener diode. Zener voltage 110V. Test current 1.1mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 1926 |
1N986A |
0.5W, silicon zener diode. Zener voltage 110V. Test current 1.1mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1927 |
1N987 |
0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 1928 |
1N987A |
0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1929 |
1N988 |
0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 1930 |
1N988A |
0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1931 |
1N989 |
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 1932 |
1N989A |
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1933 |
1N990 |
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 1934 |
1N990A |
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1935 |
1N991 |
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 1936 |
1N991A |
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1937 |
1N992 |
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 1938 |
1N992A |
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1939 |
1S1837 |
Silicon diffused junction rectifier, High Voltage Rectifier for Color Television Receivers Application (Doubler Circuits) |
TOSHIBA |
| 1940 |
1S2452 |
Silicon planar temperature compensated zener diode 6.35V |
TOSHIBA |
| 1941 |
1S2453 |
Silicon planar temperature compensated zener diode 6.35V |
TOSHIBA |
| 1942 |
1S2454 |
Silicon planar temperature compensated zener diode 6.35V |
TOSHIBA |
| 1943 |
1S2638 |
Tuner AFC Diode |
Honey Technology |
| 1944 |
1SMC5384 |
Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 160 V. Test current Izt = 8 mA. |
Panjit International Inc |
| 1945 |
1SS400-G |
Small Signal Switching Diodes, VRRM=90V, VR=90V, PD=150mW, IF=100mA |
Comchip Technology |
| 1946 |
1V010 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 18 V @ 1mA DC test current. |
NTE Electronics |
| 1947 |
1V014 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 22 V @ 1mA DC test current. |
NTE Electronics |
| 1948 |
1V015 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 24 V @ 1mA DC test current. |
NTE Electronics |
| 1949 |
1V017 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 27 V @ 1mA DC test current. |
NTE Electronics |
| 1950 |
1V020 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 33 V @ 1mA DC test current. |
NTE Electronics |
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