| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
FDC6000NZ |
Dual N-Channel 2.5V Specified PowerTrench MOSFET |
Fairchild Semiconductor |
| 1922 |
FDD1600N10ALZ |
N-Channel PowerTrench� MOSFET 100V, 6.8A, 160m? |
Fairchild Semiconductor |
| 1923 |
FDD1600N10ALZD |
BoostPak (N-Channel PowerTrench� MOSFET + Diode) 100 V, 6.8 A, 160 m? |
Fairchild Semiconductor |
| 1924 |
FDL100N50F |
N-Channel UniFETTM FRFET� MOSFET 500V, 100A, 55m? |
Fairchild Semiconductor |
| 1925 |
FDM3300NZ |
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
Fairchild Semiconductor |
| 1926 |
FDMB3800N |
30V Dual N-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
| 1927 |
FDP100N10 |
N-Channel PowerTrench� MOSFET 100V, 75A, 10m? |
Fairchild Semiconductor |
| 1928 |
FDT1600N10ALZ |
N-Channel PowerTrench� MOSFET 100V, 5.6A, 160m? |
Fairchild Semiconductor |
| 1929 |
FDY3000NZ |
20V Dual N-Channel 2.5V Specified PowerTrench� MOSFET |
Fairchild Semiconductor |
| 1930 |
FDY300NZ |
20V Single N-Channel 2.5V Specified PowerTrench� MOSFET |
Fairchild Semiconductor |
| 1931 |
FJH131/7400N |
Quadruple 2-input NAND gate |
Mullard |
| 1932 |
FP0100N8-G |
Fault Protection ICs |
Microchip |
| 1933 |
FSGM300N |
SMPS Power Switch, 30W, 650V |
Fairchild Semiconductor |
| 1934 |
FSQ500N |
Green Mode Fairchild Power Switch (FPSTM) |
Fairchild Semiconductor |
| 1935 |
G1000N |
Anode-Shorted Gate Turn-Off Thyristor |
Westcode Semiconductors |
| 1936 |
G121300N000 |
Liquid crystal display module |
Epson Company |
| 1937 |
G121300N000 |
LIQUID CRYSTAL DISPLAY MODULE�� |
Seiko Instruments Inc |
| 1938 |
G121600N000 |
Liquid crystal display module |
Epson Company |
| 1939 |
G121600N000 |
LIQUID CRYSTAL DISPLAY MODULE�� |
Seiko Instruments Inc |
| 1940 |
GA100NA60U |
600V UltraFast 10-30 kHz Single IGBT in a SOT-227 package |
International Rectifier |
| 1941 |
GA200NS61U |
600V UltraFast 10-30 kHz Hs Chop S IGBT in a INT-A-Pak package |
International Rectifier |
| 1942 |
GBE1300NMSFPTRX1,25G |
Transceivers by Form-factor MSA - SFP - Single Mode 1300 nm, 1.25GBit/s GBE, 1.0625 GBit/s FC, LC, 10 km, 3.3V |
Infineon |
| 1943 |
GJH131/74H00N |
Quadruple 2-input NAND gate |
Mullard |
| 1944 |
GLT6100L08LL-100ST |
100ns; Ultra low power 128k x 8 CMOS SRAM |
G-LINK Technology |
| 1945 |
GLT6100L08LL-100TC |
100ns; Ultra low power 64K x 16 CMOS SRAM |
G-LINK Technology |
| 1946 |
GLT6100L08LL-100TS |
100ns; Ultra low power 128k x 8 CMOS SRAM |
G-LINK Technology |
| 1947 |
GLT6100L08SL-100ST |
100ns; Ultra low power 128k x 8 CMOS SRAM |
G-LINK Technology |
| 1948 |
GLT6100L08SL-100TC |
100ns; Ultra low power 64K x 16 CMOS SRAM |
G-LINK Technology |
| 1949 |
GLT6100L08SL-100TS |
100ns; Ultra low power 128k x 8 CMOS SRAM |
G-LINK Technology |
| 1950 |
GP800NSM33 |
Hi-Reliability Single Switch IGBT Module Preliminary Information |
Dynex Semiconductor |
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