No. |
Part Name |
Description |
Manufacturer |
1921 |
NX8567SAS606-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. SC-UPC connector. |
NEC |
1922 |
NX8570SC606-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. FC-PC connector. |
NEC |
1923 |
NX8570SC606-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. SC-PC connector. |
NEC |
1924 |
NX8571SC606-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. FC-PC connector. |
NEC |
1925 |
NX8571SC606-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1560.606 nm. Frequency 192.10 THz. SC-PC connector. |
NEC |
1926 |
P6606-110 |
InSb photoconductive detector |
Hamamatsu Corporation |
1927 |
P6606-210 |
InSb photoconductive detector |
Hamamatsu Corporation |
1928 |
P6606-305 |
InSb photoconductive detector |
Hamamatsu Corporation |
1929 |
P6606-310 |
InSb photoconductive detector |
Hamamatsu Corporation |
1930 |
P6606-320 |
InSb photoconductive detector |
Hamamatsu Corporation |
1931 |
PBF-1206-22 |
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
1932 |
PBW-1206-33 |
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc |
DENSEI-LAMBDA |
1933 |
PC87306-IBG_VUL |
Super I/O Enhanced Sidewinder Lite Floppy Disk Controller, Keyboard Controller, RTC, Dual Uarts, Infared Interface [Life-time buy] |
National Semiconductor |
1934 |
PCA9306-Q1 |
Automotive Catalog Dual Bidirectional I2C Bus and SMBus Voltage-Level Translator |
Texas Instruments |
1935 |
PCR406-5 |
UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices |
Unisonic Technologies |
1936 |
PCR406-6 |
UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices |
Unisonic Technologies |
1937 |
PD57006-01 |
RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY |
SGS Thomson Microelectronics |
1938 |
PD57006-E |
6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
1939 |
PD84006-E |
RF Power LDMOS transistor |
ST Microelectronics |
1940 |
PD85006-E |
6W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package |
ST Microelectronics |
1941 |
PIC10F206-E/MC |
8-bit PIC Microcontrollers |
Microchip |
1942 |
PIC10F206-E/OT |
8-bit PIC Microcontrollers |
Microchip |
1943 |
PIC10F206-E/P |
8-bit PIC Microcontrollers |
Microchip |
1944 |
PIC10F206-I/MC |
8-bit PIC Microcontrollers |
Microchip |
1945 |
PIC10F206-I/OT |
8-bit PIC Microcontrollers |
Microchip |
1946 |
PIC10F206-I/P |
8-bit PIC Microcontrollers |
Microchip |
1947 |
PIC16F506-E/MG |
8-bit PIC Microcontrollers |
Microchip |
1948 |
PIC16F506-E/P |
8-bit PIC Microcontrollers |
Microchip |
1949 |
PIC16F506-E/SL |
8-bit PIC Microcontrollers |
Microchip |
1950 |
PIC16F506-E/SLVAO |
8-bit PIC Microcontrollers |
Microchip |
| | | |