No. |
Part Name |
Description |
Manufacturer |
1921 |
PDTC123YM |
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
1922 |
PDTC123YMB |
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ |
Nexperia |
1923 |
PDTC123YMB |
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ |
NXP Semiconductors |
1924 |
PDTC123YT |
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm |
Nexperia |
1925 |
PDTC123YT |
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
1926 |
PDTC123YU |
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm |
Nexperia |
1927 |
PDTC123YU |
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
1928 |
PDTC323TK |
NPN 500 mA, 15 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = open |
Philips |
1929 |
PDTD123E |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
Philips |
1930 |
PDTD123E |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
Philips |
1931 |
PDTD123EK |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
Philips |
1932 |
PDTD123EK |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
Philips |
1933 |
PDTD123ES |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
Philips |
1934 |
PDTD123ES |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
Philips |
1935 |
PDTD123ET |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
1936 |
PDTD123ET |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
1937 |
PDTD123ET |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
1938 |
PDTD123ET |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
1939 |
PDTD123ET |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
Philips |
1940 |
PDTD123ET |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
Philips |
1941 |
PDTD123TT |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open |
Nexperia |
1942 |
PDTD123TT |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open |
NXP Semiconductors |
1943 |
PDTD123YT |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm |
Nexperia |
1944 |
PDTD123YT |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
1945 |
PE3236-00 |
2.2 GHz integer-N PLL for low phase noise applications |
Peregrine Semiconductor |
1946 |
PE3236-21 |
2.2 GHz integer-N PLL for low phase noise applications |
Peregrine Semiconductor |
1947 |
PE3236-22 |
2.2 GHz integer-N PLL for low phase noise applications |
Peregrine Semiconductor |
1948 |
PE3239-00 |
2.2 GHz integer-N PLL for low phase noise applications |
Peregrine Semiconductor |
1949 |
PE3239-11 |
2.2 GHz integer-N PLL for low phase noise applications |
Peregrine Semiconductor |
1950 |
PE3239-12 |
2.2 GHz integer-N PLL for low phase noise applications |
Peregrine Semiconductor |
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