No. |
Part Name |
Description |
Manufacturer |
1921 |
1SMC9.0CA |
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 5.0 THRU 170 VOLTS |
Central Semiconductor |
1922 |
1SMC90A |
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 5.0 THRU 170 VOLTS |
Central Semiconductor |
1923 |
1SMC90CA |
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 5.0 THRU 170 VOLTS |
Central Semiconductor |
1924 |
2576 |
5-AmpAdjustableRegulators |
National Semiconductor |
1925 |
26LS31 |
QuadHighSpeedDifferentialLineDriver |
National Semiconductor |
1926 |
27256 |
256K (32k x 8) Bit NMOS UV Erasable PROM |
General Semiconductor |
1927 |
27C128 |
128K (16K x 8) CMOS UV Erasable PROM |
General Semiconductor |
1928 |
27C16 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
1929 |
27C16Q450 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
1930 |
27C16Q550 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
1931 |
27C16Q883 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
1932 |
27C256 |
256K CMOS UV Erasable PROM (32K X 8) |
General Semiconductor |
1933 |
27C256 |
262,144-Bit (32,768 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
1934 |
27C256E250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
1935 |
27C256E300_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns |
National Semiconductor |
1936 |
27C256E350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
1937 |
27C256Q250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
1938 |
27C256Q300_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns |
National Semiconductor |
1939 |
27C256Q350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
1940 |
27C64 |
65,536-Bit (8,192 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
1941 |
29F52 |
8-Bit Registered Transceiver (Inverting) |
National Semiconductor |
1942 |
29F53 |
8-Bit Registered Transceiver (Inverting) |
National Semiconductor |
1943 |
2KBP005M |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
1944 |
2KBP01M |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
1945 |
2KBP02M |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
1946 |
2KBP04M |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
1947 |
2KBP06M |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
1948 |
2KBP08M |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
1949 |
2KBP10M |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
1950 |
2N1052 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
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