| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1922 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 1923 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1924 |
2N6136 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 1925 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 1926 |
2N6312 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 1927 |
2N6439 |
Application Note - A 60W 225-400MHz amplifier |
Motorola |
| 1928 |
2N650 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1929 |
2N650A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1930 |
2N651 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1931 |
2N651A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1932 |
2N652 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1933 |
2N652A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1934 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 1935 |
2N669 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 1936 |
2N697 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 1937 |
2N697 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1938 |
2N699 |
NPN silicon annular transistor designed for medium-current switching and amplifier applications |
Motorola |
| 1939 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 1940 |
2N7000A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
| 1941 |
2N7002A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
| 1942 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 1943 |
2N705 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 1944 |
2N706 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1945 |
2N706 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 1946 |
2N706A |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 1947 |
2N706B |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 1948 |
2N707 |
NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications |
Motorola |
| 1949 |
2N707A |
NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications |
Motorola |
| 1950 |
2N708 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
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