| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
MS8050-L |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 1922 |
MSAGA11F120D |
Insulated Gate Bipolar Transistor |
Microsemi |
| 1923 |
MSAGX60F60A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 1924 |
MSAGX75F60A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 1925 |
MSAGX75L60A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 1926 |
MSAGZ52F120A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 1927 |
MSAHX60F60A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 1928 |
MSAHX75L60C |
Insulated Gate Bipolar Transistor |
Microsemi |
| 1929 |
MSAHZ52F120A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 1930 |
MV74SC245 |
Octal BUS transceiveers with 3-state buffered outputs |
PLESSEY Semiconductors |
| 1931 |
MV74SC545 |
Octal BUS transceiveers with 3-state buffered outputs |
PLESSEY Semiconductors |
| 1932 |
N8T95B |
High speed HEX TRI-STATE buffers |
Signetics |
| 1933 |
N8T95F |
High speed HEX TRI-STATE buffers |
Signetics |
| 1934 |
N8T97B |
High speed HEX TRI-STATE buffers |
Signetics |
| 1935 |
N8T97F |
High speed HEX TRI-STATE buffers |
Signetics |
| 1936 |
NJU6342 |
Tri-state Buffer |
New Japan Radio |
| 1937 |
NJU6342H |
Tri-state Buffer |
New Japan Radio |
| 1938 |
NJU6342XC |
Tri-state Buffer |
New Japan Radio |
| 1939 |
NJU6342XE |
Tri-state Buffer |
New Japan Radio |
| 1940 |
NL17SH125 |
Non-Inverting 3-State Buffer |
ON Semiconductor |
| 1941 |
NL17SH126 |
NL17SH126 Noninverting 3-State Buffer |
ON Semiconductor |
| 1942 |
NL17SZ125-D |
Non-Inverting 3-State Buffer |
ON Semiconductor |
| 1943 |
NL17SZ126-D |
Non-inverting 3-State Buffer |
ON Semiconductor |
| 1944 |
NLX1G125 |
Non-Inverting 3-State Buffer |
ON Semiconductor |
| 1945 |
NTE3300 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 1946 |
NTE3301 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 1947 |
NTE3302 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 1948 |
NTE3303 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 1949 |
NTE3310 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
| 1950 |
NTE3311 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE Electronics |
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