No. |
Part Name |
Description |
Manufacturer |
1921 |
BD241A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. |
General Electric Solid State |
1922 |
BD241A |
NPN SILICON EPITAXIAL BASE POWER TRANSISTORS |
Micro Electronics |
1923 |
BD241A |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD242A |
SESCOSEM |
1924 |
BD241B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. |
General Electric Solid State |
1925 |
BD241B |
NPN SILICON EPITAXIAL BASE POWER TRANSISTORS |
Micro Electronics |
1926 |
BD241B |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD242B |
SESCOSEM |
1927 |
BD241C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 40W. |
General Electric Solid State |
1928 |
BD241C |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD242C |
SESCOSEM |
1929 |
BD242 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 40W. |
General Electric Solid State |
1930 |
BD242 |
PNP SILICON EPITAXIAL BASE POWER TRANSISTORS |
Micro Electronics |
1931 |
BD242 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD241 |
SESCOSEM |
1932 |
BD242A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 40W. |
General Electric Solid State |
1933 |
BD242A |
PNP SILICON EPITAXIAL BASE POWER TRANSISTORS |
Micro Electronics |
1934 |
BD242A |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD241A |
SESCOSEM |
1935 |
BD242B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 40W. |
General Electric Solid State |
1936 |
BD242B |
PNP SILICON EPITAXIAL BASE POWER TRANSISTORS |
Micro Electronics |
1937 |
BD242B |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD242B |
SESCOSEM |
1938 |
BD242C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 40W. |
General Electric Solid State |
1939 |
BD242C |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD242C |
SESCOSEM |
1940 |
BD243 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 65W. |
General Electric Solid State |
1941 |
BD243A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 65W. |
General Electric Solid State |
1942 |
BD243B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 65W. |
General Electric Solid State |
1943 |
BD243C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 65W. |
General Electric Solid State |
1944 |
BD244 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 65W. |
General Electric Solid State |
1945 |
BD244A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 65W. |
General Electric Solid State |
1946 |
BD244B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 65W. |
General Electric Solid State |
1947 |
BD244C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 65W. |
General Electric Solid State |
1948 |
BD277 |
7-A 70-W EPITAXIAL BASE SILICON PNP VERSAWATT TRANSISTORS |
General Electric Solid State |
1949 |
BD277 |
7-A 70-W EPITAXIAL BASE SILICON PNP VERSAWATT TRANSISTORS |
General Electric Solid State |
1950 |
BD281 |
Silicon EPIBASE NPN Transistor, suitable for use in output stages of car radios |
SGS-ATES |
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