| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
2N880 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1922 |
2N881 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1923 |
2N882 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1924 |
2N883 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1925 |
2N884 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1926 |
2N885 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1927 |
2N886 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1928 |
2N887 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1929 |
2N888 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1930 |
2N889 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1931 |
2N890 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1932 |
2N891 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1933 |
2N930 |
AMPLIFIER TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 1934 |
2N930A |
AMPLIFIER TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 1935 |
2N956 |
GENERAL PURPOSE TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 1936 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
| 1937 |
2SA1282 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1938 |
2SA1282A |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1939 |
2SA1283 |
SILICON PNP 2SA1283 |
Isahaya Electronics Corporation |
| 1940 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 1941 |
2SA1285 |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1942 |
2SA1285A |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1943 |
2SA1286 |
SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1944 |
2SA1287 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1945 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
| 1946 |
2SA1364 |
SILICON PNP TRANSISTOR |
Isahaya Electronics Corporation |
| 1947 |
2SA1365 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1948 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 1949 |
2SA1368 |
2SA1368 |
Isahaya Electronics Corporation |
| 1950 |
2SA1369 |
FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
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