| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
2SA872 |
Silicon PNP Epitaxial |
Hitachi Semiconductor |
| 1922 |
2SA872A |
Silicon PNP Epitaxial |
Hitachi Semiconductor |
| 1923 |
2SA880 |
SI PNP EPITAXIAL PLANAR |
Panasonic |
| 1924 |
2SA881 |
Epitaxial Planar NPN Silicon Transistors |
ROHM |
| 1925 |
2SA883 |
PNP SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 1926 |
2SA887 |
SILICON PNP EPITAXIAL PLANAR |
Panasonic |
| 1927 |
2SA893 |
Silicon PNP Epitaxial |
Hitachi Semiconductor |
| 1928 |
2SA893A |
Silicon PNP Epitaxial |
Hitachi Semiconductor |
| 1929 |
2SA912 |
SI PNP EPITAXIAL PLANAR |
Unknow |
| 1930 |
2SA913 |
SI PNP EPITAXIAL PLANAR |
Panasonic |
| 1931 |
2SA913A |
SI PNP EPITAXIAL PLANAR |
Panasonic |
| 1932 |
2SA933 |
EPITAXIAL PLANAR PNP SILICON TRANSISTORS |
ROHM |
| 1933 |
2SA933S |
EPITAXIAL PLANAR PNP SILICON TRANSISTORS |
ROHM |
| 1934 |
2SA937 |
EPITAXIAL PLANAR PNP SILICON TRANSISTORS |
ROHM |
| 1935 |
2SA940 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
| 1936 |
2SA941 |
SILICON PNP EPITAXIAL TRANSISTOR(PCT PROCESS) |
Unknow |
| 1937 |
2SA942 |
SILICON PNP EPITAXIAL TRANSISTOR(PCT PROCESS) |
Unknow |
| 1938 |
2SA950 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Power Amplifier Applications |
TOSHIBA |
| 1939 |
2SA956 |
PNP silicon epitaxial transistor |
NEC |
| 1940 |
2SA956 |
PNP SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 1941 |
2SA957 |
SILICON PNP EPITAXIAL TRANSISTOR |
Unknow |
| 1942 |
2SA958 |
SILICON PNP EPITAXIAL TRANSISTOR |
Unknow |
| 1943 |
2SA962A |
Silicon PNP epitaxial power transistor, complementary 2SC2194A |
TOSHIBA |
| 1944 |
2SA966 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1945 |
2SA968 |
Silicon PNP epitaxial power transistor, complementary 2SC2238 |
TOSHIBA |
| 1946 |
2SA968 |
SILICON PNP EPITAXIAL TRANSISTOR PCT PROCESS |
Unknow |
| 1947 |
2SA968A |
SILICON PNP EPITAXIAL TRANSISTOR PCT PROCESS |
Unknow |
| 1948 |
2SA968B |
V(cbo): 200V; V(ceo): 200V; V(ebo): 5V; 1.5A; 25W ; silicon PNP epitaxial type silicon power transistor |
TOSHIBA |
| 1949 |
2SA968B |
SILICON PNP EPITAXIAL TRANSISTOR PCT PROCESS |
Unknow |
| 1950 |
2SA969A |
Silicon PNP epitaxial power transistor, complementary 2SC2238A |
TOSHIBA |
| | | |
