| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
2900 Series |
Temperature Stable Resonator |
Skyworks Solutions |
| 1922 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 1923 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 1924 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 1925 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 1926 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 1927 |
2N2728 |
PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries |
Motorola |
| 1928 |
2N4212 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 1929 |
2N4213 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 1930 |
2N4214 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 1931 |
2N4215 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 1932 |
2N4216 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 1933 |
2N441 |
PNP germanium power transistor, Power and temperature exceed EIA registration |
Motorola |
| 1934 |
2N442 |
PNP germanium power transistor, Power and temperature exceed EIA registration |
Motorola |
| 1935 |
2N443 |
PNP germanium power transistor, Power and temperature exceed EIA registration |
Motorola |
| 1936 |
2N5016 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 1937 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
| 1938 |
2N5470 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 1939 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 1940 |
2N5919 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 1941 |
2N6093 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
| 1942 |
2SA9012 |
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH PULL OPERATION |
USHA India LTD |
| 1943 |
2SB1149 |
Suitable for use to operate from IC without Predriver, such as hammer driver |
NEC |
| 1944 |
2SB1357 |
Transistor PNP (low collector saturation voltage wide safe operation area) |
ROHM |
| 1945 |
2SC150T |
Silicon NPN Transistor Low Temperature Passivation, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 1946 |
2SC154C |
Silicon NPN Transistor Triple Diffused Low Temperature Passivation, intended for use in High Voltage and Wide bandwidth video power output |
Hitachi Semiconductor |
| 1947 |
2SC2532 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications |
TOSHIBA |
| 1948 |
2SC3964 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS TEMPERATURE COMPENSATED FOR AUDIO AMPLIFIER OUTPUT STAGE |
TOSHIBA |
| 1949 |
2SC9013 |
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION |
USHA India LTD |
| 1950 |
2SD1092 |
NPN DOUBLE DIFFUSED TYPE (POWER REGULATOR FOR LINE OPERATED TV) |
TOSHIBA |
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