No. |
Part Name |
Description |
Manufacturer |
1921 |
2SC1778 |
SILICON NPN EPITAXIAL PLANAR TRANSISTOR |
Panasonic |
1922 |
2SC1787 |
SI NPN EPITAXIAL PLANAR |
Panasonic |
1923 |
2SC1789 |
Si NPN Epitaxial Planar |
Unknow |
1924 |
2SC1809 |
Epitaxial Planar NPN Silicon Transistor |
ROHM |
1925 |
2SC1815 |
NPN SILICON EPITAXIAL TRANSISTOR |
Micro Electronics |
1926 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
1927 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
1928 |
2SC1827 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
1929 |
2SC1848 |
Si NPN Epitaxial Planar |
Unknow |
1930 |
2SC1849 |
Si NPN Epitaxial Planar |
Unknow |
1931 |
2SC1850 |
Si NPN Epitaxial Planar |
Unknow |
1932 |
2SC1907 |
Silicon NPN Epitaxial Planar |
Hitachi Semiconductor |
1933 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
1934 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
1935 |
2SC1929 |
SI NPN EPITAXIAL PLANAR |
Panasonic |
1936 |
2SC1944 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1937 |
2SC1945 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1938 |
2SC1946 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1939 |
2SC1947 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1940 |
2SC1955 |
Silicon NPN epitaxial planar VHF band power transistor |
TOSHIBA |
1941 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
1942 |
2SC1965 |
NPN epitaxial planar RF power VHF transistor 6W 13.5V |
Mitsubishi Electric Corporation |
1943 |
2SC1966 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1944 |
2SC1967 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1945 |
2SC1968 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1946 |
2SC1968A |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1947 |
2SC1969 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1948 |
2SC1970 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1949 |
2SC1971 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1950 |
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
Mitsubishi Electric Corporation |
| | | |