| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
2SC5317 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: fT=16GHz series) |
TOSHIBA |
| 1922 |
2SC5317FT |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: fT=16GHz series) |
TOSHIBA |
| 1923 |
2SC5318 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: fT=16GHz series) |
TOSHIBA |
| 1924 |
2SC5319 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 1925 |
2SC5320 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: FT=16GHz series) |
TOSHIBA |
| 1926 |
2SC5321 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 1927 |
2SC5322 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 1928 |
2SC5322FT |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 1929 |
2SC5323 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 1930 |
2SC5324 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 1931 |
2SC5335 |
Silicon NPN epitaxial planer type(For low-frequency output amplification) |
Panasonic |
| 1932 |
2SC5336 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 1933 |
2SC5337 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 1934 |
2SC5338 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 1935 |
2SC5347 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications |
SANYO |
| 1936 |
2SC535 |
Silicon NPN Epitaxial Planar |
Hitachi Semiconductor |
| 1937 |
2SC535 |
Silicon NPN Epitaxial Planar Transistor, intended for use in FM RF Amplifier, Frequency Converter, Local Oscillator |
Hitachi Semiconductor |
| 1938 |
2SC5369 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
NEC |
| 1939 |
2SC536N |
NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1940 |
2SC5374 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amplifiers Applications |
SANYO |
| 1941 |
2SC5375 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amplifiers Applications |
SANYO |
| 1942 |
2SC5376 |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 1943 |
2SC5376F |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 1944 |
2SC5378 |
Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation) |
Panasonic |
| 1945 |
2SC5390 |
Silicon NPN Epitaxial High Frequency Amplifier |
Hitachi Semiconductor |
| 1946 |
2SC5395 |
SILICON NPN EPITAXIAL TYPE TRANSISTOR |
Isahaya Electronics Corporation |
| 1947 |
2SC5396 |
SILICON NPN EPITAXIAL TYPE TRANSISTOR |
Isahaya Electronics Corporation |
| 1948 |
2SC5397 |
Silicon NPN epitaxial planar type |
Isahaya Electronics Corporation |
| 1949 |
2SC5398 |
For Llow Frequency Amplifty Application Silicom NPN Epitaxial Type Micro(Frame type) |
Isahaya Electronics Corporation |
| 1950 |
2SC5408 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
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