| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
NE56954 |
4.5 GHz NPN medium power microwave transistor |
NEC |
| 1922 |
NE56987 |
4.5 GHz NPN medium power microwave transistor |
NEC |
| 1923 |
NE57500 |
NPN medium power microwave transistor |
NEC |
| 1924 |
NE57510 |
NPN medium power microwave transistor |
NEC |
| 1925 |
NE57800 |
NPN silicon microwave transistor |
NEC |
| 1926 |
NE57835 |
NPN silicon microwave transistor |
NEC |
| 1927 |
NE64300 |
2 GHz NPN medium power microwave transistor |
NEC |
| 1928 |
NE64310 |
2 GHz NPN medium power microwave transistor |
NEC |
| 1929 |
NE64320 |
2 GHz NPN medium power microwave transistor |
NEC |
| 1930 |
NE698M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
| 1931 |
NE699M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
| 1932 |
NE77300 |
2.5 GHz, NPN medium power microwave transistor |
NEC |
| 1933 |
NE77310 |
2.5 GHz, NPN medium power microwave transistor |
NEC |
| 1934 |
NE77320 |
2.5 GHz, NPN medium power microwave transistor |
NEC |
| 1935 |
NE87112 |
NPN silicon microwave transistor |
NEC |
| 1936 |
NE90100 |
PNP medium power microwave transistor |
NEC |
| 1937 |
NE90115 |
PNP medium power microwave transistor |
NEC |
| 1938 |
NTE517 |
Silicon High Voltage Plastic Rectifier for Industrial and Microwave Oven |
NTE Electronics |
| 1939 |
OST-02 |
1.5-2.4 Microcrowave Electronically Tunable Transistor Oscillator |
CCSIT-CE |
| 1940 |
P2750 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1941 |
P2750-06 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1942 |
P2750-08 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1943 |
P3257-30 |
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1944 |
P3257-31 |
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1945 |
P3257-50 |
Allowable current:40mA; MCT photoconductive detector: dewar type detector with high sensitivity and high-speed response in long wavelength range |
Hamamatsu Corporation |
| 1946 |
P3981 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1947 |
P3981-01 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 1948 |
PDE1001U |
Microwave Power NPN Transistor for use in space, military and professional applications |
Philips |
| 1949 |
PDE1003U |
Microwave Power NPN Transistor for use in space, military and professional applications |
Philips |
| 1950 |
PDE1005U |
Microwave Power NPN Transistor for use in space, military and professional applications |
Philips |
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