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Datasheets for PLIFIER A

Datasheets found :: 2199
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No. Part Name Description Manufacturer
1921 Q62702-F1794 NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) Siemens
1922 Q62702-F42 NPN Silicon RF Transistor (For amplifier and oscillator applications in TV-tuners) Siemens
1923 Q62702-F935 NPN SILICON RF TRANSISTOR (For linear broadband amplifier applications up to 500 MHz SAW filter driver in TV tuners) Siemens
1924 RCA-40934 High-Power Silicon NPN VHF/UHF Transistor 12.5 Volt type for Class C amplifier applications RCA Solid State
1925 RCA-40936 20W (PEP) Emitter-Ballasted Overlay Transistor for 2-to-30-MHz Single Sideband Linear Amplifier Applications RCA Solid State
1926 RCA1804 Silicon transistor for audio-amplifier applications. 225V, 150W. General Electric Solid State
1927 RCA1805 Silicon transistor for audio-amplifier applications. 275V, 150W. General Electric Solid State
1928 RN5001 Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications TOSHIBA
1929 RN5002 Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications TOSHIBA
1930 RN5003 Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications TOSHIBA
1931 RN5006 Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications TOSHIBA
1932 RN6001 Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications TOSHIBA
1933 RN6002 Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications TOSHIBA
1934 RN6003 Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications TOSHIBA
1935 RN6006 Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications TOSHIBA
1936 SA2410 2.45GHz RF power amplifier and T/R switch Philips
1937 SA58605 Dual operational amplifier and 2.5 V shunt regulator Philips
1938 SA639 Low voltage mixer FM IF system with filter amplifier and data switch Philips
1939 SA639DH Low voltage mixer FM IF system with filter amplifier and data switch NXP Semiconductors
1940 SA639DH Low voltage mixer FM IF system with filter amplifier and data switch Philips
1941 SAP08 Darlington transistors with built-in temperature compensation diodes for audio amplifier applications Sanken
1942 SAP08N Darlington transistors with built-in temperature compensation diodes for audio amplifier applications Sanken
1943 SAP08P Darlington transistors with built-in temperature compensation diodes for audio amplifier applications Sanken
1944 SAP10 Darlington transistors with built-in temperature compensation diodes for audio amplifier applications Sanken
1945 SAP15 Darlington transistors with built-in temperature compensation diodes for audio amplifier applications Sanken
1946 SAP15N Darlington transistors with built-in temperature compensation diodes for audio amplifier applications Sanken
1947 SAP15P Darlington transistors with built-in temperature compensation diodes for audio amplifier applications Sanken
1948 SC3279 NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) TOSHIBA
1949 SC5262 NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) TOSHIBA
1950 SD1400-03 24V 14W Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 900-960MHz frequency range SGS Thomson Microelectronics


Datasheets found :: 2199
Page: | 61 | 62 | 63 | 64 | 65 | 66 | 67 | 68 | 69 |



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