No. |
Part Name |
Description |
Manufacturer |
1921 |
Q62702-F1794 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
1922 |
Q62702-F42 |
NPN Silicon RF Transistor (For amplifier and oscillator applications in TV-tuners) |
Siemens |
1923 |
Q62702-F935 |
NPN SILICON RF TRANSISTOR (For linear broadband amplifier applications up to 500 MHz SAW filter driver in TV tuners) |
Siemens |
1924 |
RCA-40934 |
High-Power Silicon NPN VHF/UHF Transistor 12.5 Volt type for Class C amplifier applications |
RCA Solid State |
1925 |
RCA-40936 |
20W (PEP) Emitter-Ballasted Overlay Transistor for 2-to-30-MHz Single Sideband Linear Amplifier Applications |
RCA Solid State |
1926 |
RCA1804 |
Silicon transistor for audio-amplifier applications. 225V, 150W. |
General Electric Solid State |
1927 |
RCA1805 |
Silicon transistor for audio-amplifier applications. 275V, 150W. |
General Electric Solid State |
1928 |
RN5001 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications |
TOSHIBA |
1929 |
RN5002 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications |
TOSHIBA |
1930 |
RN5003 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications |
TOSHIBA |
1931 |
RN5006 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications |
TOSHIBA |
1932 |
RN6001 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications |
TOSHIBA |
1933 |
RN6002 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications |
TOSHIBA |
1934 |
RN6003 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications |
TOSHIBA |
1935 |
RN6006 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications |
TOSHIBA |
1936 |
SA2410 |
2.45GHz RF power amplifier and T/R switch |
Philips |
1937 |
SA58605 |
Dual operational amplifier and 2.5 V shunt regulator |
Philips |
1938 |
SA639 |
Low voltage mixer FM IF system with filter amplifier and data switch |
Philips |
1939 |
SA639DH |
Low voltage mixer FM IF system with filter amplifier and data switch |
NXP Semiconductors |
1940 |
SA639DH |
Low voltage mixer FM IF system with filter amplifier and data switch |
Philips |
1941 |
SAP08 |
Darlington transistors with built-in temperature compensation diodes for audio amplifier applications |
Sanken |
1942 |
SAP08N |
Darlington transistors with built-in temperature compensation diodes for audio amplifier applications |
Sanken |
1943 |
SAP08P |
Darlington transistors with built-in temperature compensation diodes for audio amplifier applications |
Sanken |
1944 |
SAP10 |
Darlington transistors with built-in temperature compensation diodes for audio amplifier applications |
Sanken |
1945 |
SAP15 |
Darlington transistors with built-in temperature compensation diodes for audio amplifier applications |
Sanken |
1946 |
SAP15N |
Darlington transistors with built-in temperature compensation diodes for audio amplifier applications |
Sanken |
1947 |
SAP15P |
Darlington transistors with built-in temperature compensation diodes for audio amplifier applications |
Sanken |
1948 |
SC3279 |
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
1949 |
SC5262 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
1950 |
SD1400-03 |
24V 14W Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 900-960MHz frequency range |
SGS Thomson Microelectronics |
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