| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
BDX85B |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1922 |
BDX85C |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1923 |
BDX87 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1924 |
BDX87A |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1925 |
BDX87B |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1926 |
BDX87C |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1927 |
BDY29 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 1928 |
BDY37 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1929 |
BDY71 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1930 |
BF173 |
0.200W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.030A Ic, 15 hFE. |
Continental Device India Limited |
| 1931 |
BF182 |
0.150W General Purpose NPN Metal Can Transistor. 20V Vceo, 0.020A Ic, 10 hFE. |
Continental Device India Limited |
| 1932 |
BF200 |
0.150W General Purpose NPN Metal Can Transistor. 20V Vceo, 0.020A Ic, 15 - 40 hFE. |
Continental Device India Limited |
| 1933 |
BF256A |
JFET General Purpose N-Channel |
ON Semiconductor |
| 1934 |
BF257 |
1.000W General Purpose NPN Metal Can Transistor. 160V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 1935 |
BF258 |
1.000W General Purpose NPN Metal Can Transistor. 250V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 1936 |
BF259 |
1.000W General Purpose NPN Metal Can Transistor. 300V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 1937 |
BF391 |
1.000W General Purpose NPN Plastic Leaded Transistor. 200V Vceo, 1.000A Ic, 25 - 0 hFE |
Continental Device India Limited |
| 1938 |
BF392 |
1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 1.000A Ic, 25 - 0 hFE |
Continental Device India Limited |
| 1939 |
BF410 |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
| 1940 |
BF410A |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
| 1941 |
BF410B |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
| 1942 |
BF410C |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
| 1943 |
BF410D |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
| 1944 |
BF494 |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 67 - 220 hFE |
Continental Device India Limited |
| 1945 |
BF494A |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 200 - 500 hFE |
Continental Device India Limited |
| 1946 |
BF494B |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 100 - 220 hFE |
Continental Device India Limited |
| 1947 |
BF495 |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 35 - 125 hFE |
Continental Device India Limited |
| 1948 |
BF495C |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 65 - 135 hFE |
Continental Device India Limited |
| 1949 |
BF495D |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 35 - 76 hFE |
Continental Device India Limited |
| 1950 |
BF840 |
0.250W General Purpose NPN SMD Transistor. 40V Vceo, 0.025A Ic, hFE. |
Continental Device India Limited |
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