| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
MFE3003 |
Silicon P-channel MOS field-effect transistor designed for chopper applications |
Motorola |
| 1922 |
MFE3004 |
Silicon N-channel MOS field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 1923 |
MFE3005 |
Silicon N-channel MOS field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 1924 |
MFE3007 |
N-Channel Dual-Gate Silicon-Nitride Passivated MOS Field-Effect Transistor Type B, designed for VHF amplifiers and mixer applications |
Motorola |
| 1925 |
MH1SD1 |
Information for designers |
Tesla Elektronicke |
| 1926 |
MH1SS1 |
Information for designers |
Tesla Elektronicke |
| 1927 |
MH1ST1 |
Information for designers |
Tesla Elektronicke |
| 1928 |
MH3001 |
Information for designers |
Tesla Elektronicke |
| 1929 |
MH3002 |
Information for designers |
Tesla Elektronicke |
| 1930 |
MH3205 |
Information for designers |
Tesla Elektronicke |
| 1931 |
MH3212 |
Information for designers |
Tesla Elektronicke |
| 1932 |
MH3214 |
Information for designers |
Tesla Elektronicke |
| 1933 |
MH3216 |
Information for designers |
Tesla Elektronicke |
| 1934 |
MH3226 |
Information for designers |
Tesla Elektronicke |
| 1935 |
MH3SD2 |
Information for designers |
Tesla Elektronicke |
| 1936 |
MH3SS2 |
Information for designers |
Tesla Elektronicke |
| 1937 |
MH3ST2 |
Information for designers |
Tesla Elektronicke |
| 1938 |
MHB93448C |
Information for designers |
Tesla Elektronicke |
| 1939 |
MHB93451C |
Information for designers |
Tesla Elektronicke |
| 1940 |
MHC93448C |
Information for designers |
Tesla Elektronicke |
| 1941 |
MHC93451C |
Information for designers |
Tesla Elektronicke |
| 1942 |
MICROMUX |
A Two-wire data acquisition system - with ASCII computer interface - designed for tough environments |
Burr Brown |
| 1943 |
Microwave Substrates |
Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications |
Skyworks Solutions |
| 1944 |
MJ2955 |
PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. |
USHA India LTD |
| 1945 |
MJ3029 |
NPN power transistor designed for horizontal and vertical deflection amplifier circuits for TV |
Motorola |
| 1946 |
MJ3030 |
NPN power transistor designed for horizontal and vertical deflection amplifier circuits for TV |
Motorola |
| 1947 |
MJ3201 |
High-voltage NPN silicon transistor designed for use in line-operated equipment |
Motorola |
| 1948 |
MJ3202 |
High-voltage NPN silicon transistor designed for use in line-operated equipment |
Motorola |
| 1949 |
MJ400 |
High-voltage NPN silicon transistor designed for video output circuitry in color television receivers |
Motorola |
| 1950 |
MJ420 |
NPN silicon high-voltage transistor designed for video output circuitry in transistorized television receivers |
Motorola |
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