| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
BUZ906 |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
Magnatec |
| 1922 |
BUZ906D |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
Magnatec |
| 1923 |
BUZ906DP |
P-CHANNEL POWER MOSFET FOR AUDIO APPLICATIONS |
Magnatec |
| 1924 |
BUZ907 |
POWER MOSFETS FOR AUDIO APPLICATIONS |
Magnatec |
| 1925 |
BUZ907D |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. |
Magnatec |
| 1926 |
BUZ907DP |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. |
Magnatec |
| 1927 |
BUZ907P |
POWER MOSFETS FOR AUDIO APPLICATIONS |
Magnatec |
| 1928 |
BUZ908 |
POWER MOSFETS FOR AUDIO APPLICATIONS |
Magnatec |
| 1929 |
BUZ908D |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. |
Magnatec |
| 1930 |
BUZ908DP |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. |
Magnatec |
| 1931 |
BUZ908P |
POWER MOSFETS FOR AUDIO APPLICATIONS |
Magnatec |
| 1932 |
C1815 |
Audio Frequency Amplifier & High Frequency OSC |
Fairchild Semiconductor |
| 1933 |
C1815 |
Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications) |
TOSHIBA |
| 1934 |
C1815 |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR |
Unisonic Technologies |
| 1935 |
C67070-A2007-A70 |
IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 1936 |
C67070-A2107-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1937 |
C67070-A2111-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
| 1938 |
C67070-A2120-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1939 |
C67070-A2300-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1940 |
C67070-A2514-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) |
Siemens |
| 1941 |
C67070-A2515-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) |
Siemens |
| 1942 |
C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) |
Siemens |
| 1943 |
C67070-A2517-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) |
Siemens |
| 1944 |
C67070-A2518-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) |
Siemens |
| 1945 |
C67070-A2519-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) |
Siemens |
| 1946 |
C67070-A2521-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) |
Siemens |
| 1947 |
C67070-A2701-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1948 |
C67070-A2702-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1949 |
C67070-A2703-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 1950 |
C67070-A2704-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
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