| No. |
Part Name |
Description |
Manufacturer |
| 19321 |
3EZ190D2 |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 19322 |
3EZ190D2 |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 19323 |
3EZ190D3 |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 19324 |
3EZ190D3 |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 19325 |
3EZ190D3 |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 19326 |
3EZ190D4 |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 19327 |
3EZ190D4 |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 19328 |
3EZ190D4 |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 19329 |
3EZ200 |
200 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 19330 |
3EZ200 |
200 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 19331 |
3EZ200D |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 19332 |
3EZ200D |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 19333 |
3EZ200D |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 19334 |
3EZ200D1 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 19335 |
3EZ200D1 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 19336 |
3EZ200D1 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 19337 |
3EZ200D10 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 19338 |
3EZ200D10 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 19339 |
3EZ200D10 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 19340 |
3EZ200D2 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 19341 |
3EZ200D2 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 19342 |
3EZ200D2 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 19343 |
3EZ200D3 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 19344 |
3EZ200D3 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 19345 |
3EZ200D3 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 19346 |
3EZ200D4 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 19347 |
3EZ200D4 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 19348 |
3EZ200D4 |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 19349 |
3KP100 |
Ppk=3000W, Vc=179V transient voltage suppressor |
MCC |
| 19350 |
3KP100A |
Ppk=3000W, Vc=162V transient voltage suppressor |
MCC |
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