| No. |
Part Name |
Description |
Manufacturer |
| 19351 |
W48C101 |
Spread Spectrum BX System Frequency Generator |
Cypress |
| 19352 |
W48C111 |
Frequency Generator for Integrated Core Logic |
Cypress |
| 19353 |
W48C111-16 |
Frequency Generator for Integrated Core Logic |
Cypress |
| 19354 |
W48C111-16H |
Frequency Generator for Integrated Core Logic |
Cypress |
| 19355 |
W48S101 |
Spread Spectrum Motherboard Frequency Generator |
Cypress |
| 19356 |
W48S101-04 |
Spread Spectrum Motherboard Frequency Generator |
Cypress |
| 19357 |
W48S101-04H |
Spread Spectrum Motherboard Frequency Generator |
Cypress |
| 19358 |
W48S111 |
Spread Spectrum Desktop/Notebook System Frequency Generator |
Cypress |
| 19359 |
W48S111-14 |
Spread Spectrum Desktop/Notebook System Frequency Generator |
Cypress |
| 19360 |
W48S111-14G |
Spread Spectrum Desktop / Notebook System Frequency Generator |
Cypress |
| 19361 |
W48S87 |
Desktop/Notebook Frequency Generator |
Cypress |
| 19362 |
W48S87-72 |
Desktop/Notebook Frequency Generator |
Cypress |
| 19363 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 19364 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 19365 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 19366 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 19367 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 19368 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 19369 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 19370 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 19371 |
W530-02HT |
Frequency-multiplying, Peak-reducing EMI Solution |
Cypress |
| 19372 |
W532 |
Frequency Multiplying, Peak Reducing EMI Solution |
Cypress |
| 19373 |
W532G |
Frequency Multiplying, Peak Reducing EMI Solution |
Cypress |
| 19374 |
W532GI |
Frequency Multiplying, Peak Reducing EMI Solution |
Cypress |
| 19375 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 19376 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 19377 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 19378 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 19379 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 19380 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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