| No. |
Part Name |
Description |
Manufacturer |
| 19471 |
HM4-6116L-5 |
Low power 2K x 8 general purpose CMOS SRAM |
MATRA MHS SA |
| 19472 |
HM4-6116L-6 |
Low power 2K x 8 general purpose CMOS SRAM |
MATRA MHS SA |
| 19473 |
HM4-6116L-9 |
Low power 2K x 8 general purpose CMOS SRAM |
MATRA MHS SA |
| 19474 |
HMBD2003 |
General purpose diodes fabricated in planar technology |
Hi-Sincerity Microelectronics |
| 19475 |
HMBD2003C |
General purpose diodes fabricated in planar technology |
Hi-Sincerity Microelectronics |
| 19476 |
HMBD2003S |
General purpose diodes fabricated in planar technology |
Hi-Sincerity Microelectronics |
| 19477 |
HMBD2004 |
General purpose diodes fabricated in planar tehnology |
Hi-Sincerity Microelectronics |
| 19478 |
HMBD2004C |
General purpose diodes fabricated in planar tehnology |
Hi-Sincerity Microelectronics |
| 19479 |
HMBD2004S |
General purpose diodes fabricated in planar tehnology |
Hi-Sincerity Microelectronics |
| 19480 |
HMBT5551 |
NPN EPITAXIAL PLANAR TRANSISTOR(for general purpose applications requiring high Breakdown Voltages ) |
Hi-Sincerity Microelectronics |
| 19481 |
HMC308 |
GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz |
Hittite Microwave Corporation |
| 19482 |
HMPP-3860 |
HMPP-3860 · Low cost general purpose PIN diode |
Agilent (Hewlett-Packard) |
| 19483 |
HMPP-3862 |
HMPP-3862 · Low cost general purpose PIN diode |
Agilent (Hewlett-Packard) |
| 19484 |
HMPP-3865 |
HMPP-3865 · Low cost general purpose PIN diode |
Agilent (Hewlett-Packard) |
| 19485 |
HN1A01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 19486 |
HN1A01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 19487 |
HN1B01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 19488 |
HN1B01FDW1T1 |
Complementary Dual General Purpose Amplifier Transistor |
ON Semiconductor |
| 19489 |
HN1B01FDW1T1-D |
Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount |
ON Semiconductor |
| 19490 |
HN1B01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 19491 |
HN1B04FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 19492 |
HN1C01F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 19493 |
HN1C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 19494 |
HN2A01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 19495 |
HN2C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 19496 |
HN3B01F |
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 19497 |
HN3B02FU |
Transistor Silicon PNP�NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 19498 |
HN4C05JU |
Multi Chip Discrete Device Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 19499 |
HN5400 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 19500 |
HN5401 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
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