| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
Q62702-A504 |
Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) |
Siemens |
| 1952 |
Q62702-A66 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type) |
Siemens |
| 1953 |
Q62702-B194 |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 � 12 V) |
Siemens |
| 1954 |
Q62702-B195 |
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 � 12 V) |
Siemens |
| 1955 |
Q62702-B257 |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 � 12 V) |
Siemens |
| 1956 |
Q62702-F1572 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) |
Siemens |
| 1957 |
Q62702-F1592 |
NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz) |
Siemens |
| 1958 |
Q62702-G0043 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 1959 |
QPA5368 |
5 - 300 MHz, 35 dB, 12 V, Si BJT Reverse MCM |
Qorvo |
| 1960 |
QPD1022 |
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor |
Qorvo |
| 1961 |
QPM1021 |
10 - 12 GHz 100 Watt GaN Power Amplifier |
Qorvo |
| 1962 |
R2560A |
R2560A High-Power 12 GHz Photodiode |
Agere Systems |
| 1963 |
R2560A023 |
R2560A High-Power 12 GHz Photodiode |
Agere Systems |
| 1964 |
R80C186XL12 |
16-bit high-integration embedded processor. 12 MHz |
Intel |
| 1965 |
R80C188XL12 |
16-bit high-integration embedded processor. 12 MHz |
Intel |
| 1966 |
S0312R |
Thyristor, 12 amperes, 30 volt |
Teccor Electronics |
| 1967 |
S0512R |
Thyristor, 12 amperes, 50 volt |
Teccor Electronics |
| 1968 |
S1012R |
Thyristor, 12 amperes, 100 volt |
Teccor Electronics |
| 1969 |
S1A12000 |
SIP reed relay. Nominal voltage 12 VDC. Contact form 1A. SPST-NO. |
Global Components & Controls |
| 1970 |
S1A120D0 |
SIP reed relay. Nominal voltage 12 VDC. Contact form 1A. SPST-NO. |
Global Components & Controls |
| 1971 |
S1A120X00 |
SIP reed relay. Nominal voltage 12 VDC. Contact form 1A. SPST-NO. |
Global Components & Controls |
| 1972 |
S2812S |
Hi-Rel DC-DC Rad-Hard Single Converter in a S package with 12 Vout |
International Rectifier |
| 1973 |
S80C186XL12 |
16-bit high-integration embedded processor. 12 MHz |
Intel |
| 1974 |
S80C188XL12 |
16-bit high-integration embedded processor. 12 MHz |
Intel |
| 1975 |
S849T |
MOSMIC® for TV-Tuner Prestage with 12 V Supply Voltage |
Vishay |
| 1976 |
S849TR |
MOSMIC® for TV-Tuner Prestage with 12 V Supply Voltage |
Vishay |
| 1977 |
S886T |
MOSMIC® for TV-Tuner Prestage with 12 V Supply Voltage |
Vishay |
| 1978 |
S886TR |
MOSMIC® for TV-Tuner Prestage with 12 V Supply Voltage |
Vishay |
| 1979 |
SB23Z012 |
ST23 Contact Secure MCU with 12 Kbytes EEPROM, enhanced security |
ST Microelectronics |
| 1980 |
SB80C186XL12 |
16-bit high-integration embedded processor. 12 MHz |
Intel |
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