| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
2N877 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1952 |
2N878 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1953 |
2N879 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1954 |
2N880 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1955 |
2N881 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1956 |
2N882 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1957 |
2N883 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1958 |
2N884 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1959 |
2N885 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1960 |
2N886 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1961 |
2N887 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1962 |
2N888 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1963 |
2N889 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1964 |
2N890 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1965 |
2N891 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
| 1966 |
2N930 |
AMPLIFIER TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 1967 |
2N930A |
AMPLIFIER TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 1968 |
2N956 |
GENERAL PURPOSE TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 1969 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
| 1970 |
2SA1282 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1971 |
2SA1282A |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1972 |
2SA1283 |
SILICON PNP 2SA1283 |
Isahaya Electronics Corporation |
| 1973 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 1974 |
2SA1285 |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1975 |
2SA1285A |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1976 |
2SA1286 |
SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1977 |
2SA1287 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1978 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
| 1979 |
2SA1364 |
SILICON PNP TRANSISTOR |
Isahaya Electronics Corporation |
| 1980 |
2SA1365 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
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